±±15k EꢀDꢁ-rotected, ±µA, ±6Mbps, Dual/Quad
Lowꢁkoltage Level Translators in UCꢀ-
I
100%
90%
R
C
50MΩ to 100MΩ
R 330Ω
D
DISCHARGE
RESISTANCE
CHARGE-CURRENT-
LIMIT RESISTOR
HIGH-
VOLTAGE
DC
DEVICE
UNDER
TEST
C
s
150pF
STORAGE
CAPACITOR
SOURCE
10%
t
t = 0.7ns to 1ns
r
30ns
60ns
Figure 4a. IEC 1000-4-2 ESD Test Model
Figure 4b. IEC 1000-4-2 ESD Generator Current Waveform
ASIC and an I2C device. A typical application involves
interfacing a low-voltage microprocessor to a 3V or 5V
D/A converter, such as the MAX517.
Applications Information
-owerꢁꢀupply Decoupling
To reduce ripple and the chance of transmitting incor-
rect data, bypass V and V
to ground with a 0.1µF
CC
-ushꢁ-ull vs. OpenꢁDrain Driving
All devices in the MAX3372E–MAX3379E and
MAX3390E–MAX3393E family may be driven in a push-
pull configuration. The MAX3373E–MAX3376E/
MAX3378E/MAX3379E and MAX3390E–MAX3393E
L
capacitor. See Typical Operating Circuit. To ensure full
15kV ESD protection, bypass V to ground with a
CC
1µF capacitor. Place all capacitors as close to the
power-supply inputs as possible.
include internal 10kΩ resistors that pull up I/O V and
L_
2
I C Level Translation
I/O V
to their respective power supplies, allowing
CC_
The MAX3373E–MAX3376E, MAX3378E/MAX3379E
and MAX3390E–MAX3393E level-shift the data present
on the I/O lines between +1.2V and +5.5V, making
them ideal for level translation between a low-voltage
operation of the I/O lines with open-drain devices. See
Timing Characteristics for maximum data rates when
using open-drain drivers.
Typical Operating Circuit
+1.8V
+3.3V
1µF
0.1µF
0.1µF
V
V
CC
L
THREE-STATE
+1.8V
SYSTEM
+3.3V
SYSTEM
CONTROLLER
MAX3378E–MAX3383E
I/O V I/O V
DATA
DATA
L_
CC_
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