Monolithic CMOS Analog Multiplexers
ABSOLUTE MAXIMUM RATINGS
Voltage Referenced to V-
Operating Temperature Ranges:
V+ ....................................................................................+44V
GND................................................................................ +25V
DG50_ACJ/CWE/CGE ........................................0°C to +70°C
DG50_ABK ......................................................-20°C to +85°C
DGS0_ADJ/DY/EWE/EGE................................-40°C to +85°C
DG50_AAK ....................................................-55°C to +125°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Digital Inputs, V and V (Note 1)..................-2V to (V+ + 2V)
S
D
or 20mA, whichever occurs first
Current (any terminal, except S or D) .................................30mA
Continuous Current, S or D.................................................20mA
Peak Current, S or D (pulsed at 1ms, 10% duty cycle max)..40mA
Continuous Power Dissipation (T = +70°C)
A
Plastic DIP (derate 10.53mW/°C above +70°C) ..........842mW
QFN (derate 19.2mW/°C above +70°C) ....................1538mW
Narrow SO (derate 8.70mWI°C above +70°C) ............696mW
Wide SO (derate 9.52mW/°C above +70°C)................762mW
CERDIP (derate 10.00mW/°C above +70°C)...............800mW
Note ꢀ: Signals on S_, D_, or IN_ exceeding V+ or V- are clamped by internal diodes. Limit forward-diode current to maximum current
ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V+ = 15V, V- = -15V, GND = OV, T = +2.°C, unless otherwise noted.)
A
DG508AA
DG509AA
DG508AD/E/B/C
DG509AD/E/B/C
PARAMETER
SWITCH
SYMBOL
CONDITIONS
UNITS
MIN TYP
MAX MIN TYP
MAX
Analog Signal Range
V
-15
+15 -15
300
+15
350
V
ANALOG
Sequence each
switch on,
V
= 10V,
D
170
130
170
130
I = -200µA
S
Drain-Source On-
Resistance
R
V
V
= 0.8V,
= 2.4V
Ω
DS(ON)
AL
V
= 10V,
AH
D
300
350
(Note 4)
I = -200µA
S
Greatest Change in
Drain-Source On-
Resistance
R
max−R
min
DS(ON)
DS(ON)
∆R
DS(ON) =
,
R
DS(ON)
∆R
6
6
%
DS(ON)
V
-10V ≥ S ≥ 10V
Between Channels
V = 10V, V = -10V
0.002
0.5
-1
0.002
1
S
D
Source Off-
Leakage Current
I
V
V
= 0V
= 0V
nA
nA
S(OFF)
D(OFF)
EN
EN
V = -10V, V = 10V
-0.5 -0.005
0.01
-0.005
S
D
V
V
V
V
= 10V, V = -10V
2
0.01
5
5
D
D
D
D
S
DG508A
DG509A
Drain Off-
Leakage
Current
= 10V, V = -10V
-2
-0.015
0.005
-0.008
-5
-0.015
0.005
-0.008
S
I
= 10V, V = -10V
2
S
= -10V, V = 10V
-2
-5
S
V
V
V
V
= V = 10V
0.015
-0.03
2
0.015
-0.03
5
5
S(all)
S(all)
S(all)
S(all)
D
Sequence each
switch on,
DG508A
DG509A
Drain On-
Leakage
Current
= V = -10V
-2
-2
-5
D
I
D(ON)
V
V
= 0.8V
= 2.4V
nA
AL
= V = 10V
0.007
-0.015
2
0.007
-0.015
D
AH
(Note 2)
= V = -10V
-5
D
2
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MAXIM [ MAXIM INTEGRATED PRODUCTS ]
