TYPICAL CHARACTERISTICS
1000
500
2000
V
DS
= 30 V
C
iss
200
100
C
oss
1000
15 V
50
C
rss
20
0
0
0
10
20
30
40
50
0
2
4
6
8
10
12
14
16
18
20
V , DRAIN–SOURCE VOLTAGE (VOLTS)
DS
I , DRAIN CURRENT (AMPS)
D
Figure 2. Capacitance versus
Drain–Source Voltage*
Figure 3. Common Source Unity Gain Frequency
versus Drain Current*
*Data shown applies to each half of MRF151G.
1.04
1.03
1.02
1.01
1
100
I = 5 A
D
4 A
0.99
0.98
0.97
0.96
0.95
0.94
0.93
0.92
0.91
0.9
T = 25°C
C
2 A
1 A
10
250 mA
50
100 mA
75
1
–25
0
25
100
2
20
200
T , CASE TEMPERATURE (°C)
C
V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DS
Figure 4. Gate–Source Voltage versus
Case Temperature*
Figure 5. DC Safe Operating Area
9:1
CENTER
IMPEDANCE
RATIO
HIGH IMPEDANCE
TAP
WINDINGS
CENTER
TAP
CONNECTIONS
TO LOW IMPEDANCE
WINDINGS
4:1
IMPEDANCE
RATIO
Figure 6. RF Transformer
REV 9
3
TE [ TE CONNECTIVITY ]
