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MRF151G 参数 Datasheet PDF下载

MRF151G图片预览
型号: MRF151G
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道宽带射频功率MOSFET [N-CHANNEL BROADBAND RF POWER MOSFET]
分类和应用: 晶体晶体管射频放大器局域网
文件页数/大小: 9 页 / 250 K
品牌: TE [ TE CONNECTIVITY ]
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ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS (Each Side)  
Drain–Source Breakdown Voltage (V = 0, I = 100 mA)  
V
(BR)DSS  
125  
Vdc  
mAdc  
µAdc  
GS  
D
Zero Gate Voltage Drain Current (V = 50 V, V = 0)  
I
5.0  
1.0  
DS  
GS  
DSS  
GSS  
Gate–Body Leakage Current (V = 20 V, V = 0)  
I
GS  
DS  
ON CHARACTERISTICS (Each Side)  
Gate Threshold Voltage (V = 10 V, I = 100 mA)  
V
1.0  
1.0  
5.0  
3.0  
3.0  
7.0  
5.0  
5.0  
Vdc  
Vdc  
DS  
D
GS(th)  
Drain–Source On–Voltage (V = 10 V, I = 10 A)  
V
DS(on)  
GS  
D
Forward Transconductance (V = 10 V, I = 5.0 A)  
g
fs  
mhos  
DS  
D
DYNAMIC CHARACTERISTICS (Each Side)  
Input Capacitance (V = 50 V, V = 0, f = 1.0 MHz)  
C
350  
220  
15  
pF  
pF  
pF  
DS  
GS  
iss  
Output Capacitance (V = 50 V, V = 0, f = 1.0 MHz)  
C
oss  
DS  
GS  
Reverse Transfer Capacitance (V = 50 V, V = 0, f = 1.0 MHz)  
C
rss  
DS  
GS  
FUNCTIONAL TESTS  
Common Source Amplifier Power Gain  
G
14  
50  
16  
55  
dB  
%
ps  
(V = 50 V, P = 300 W, I = 500 mA, f = 175 MHz)  
DD  
out  
DQ  
Drain Efficiency  
η
(V = 50 V, P = 300 W, f = 175 MHz, I (Max) = 11 A)  
DD  
out  
D
Load Mismatch  
ψ
(V = 50 V, P = 300 W, I = 500 mA,  
No Degradation in Output Power  
DD  
out  
DQ  
VSWR 5:1 at all Phase Angles)  
R1  
L2  
+
+
C4  
C5  
C9 C10  
50 V  
BIAS 0–6 V  
C11  
C12  
L1  
D.U.T.  
T2  
R2  
C1  
OUTPUT  
T1  
INPUT  
C6  
C2  
C3  
C7  
C8  
R1 — 100 Ohms, 1/2 W  
R2 — 1.0 kOhm, 1/2 W  
C1 — Arco 424  
C2 — Arco 404  
C3, C4, C7, C8, C9 — 1000 pF Chip  
C5, C10 — 0.1 µF Chip  
C6 — 330 pF Chip  
C11 — 0.47 µF Ceramic Chip, Kemet 1215 or  
C11 — Equivalent (100 V)  
T1 — 9:1 RF Transformer. Can be made of 1518 Ohms  
T1 — Semirigid Co–Ax, 6290 Mils O.D.  
T2 — 1:4 RF Transformer. Can be made of 1618 Ohms  
T2 — Semirigid Co–Ax, 70–90 Mils O.D.  
Board Material — 0.062Fiberglass (G10),  
1 oz. Copper Clad, 2 Sides, ε = 5.0  
r
C12 — Arco 422  
L1 — 10 Turns AWG #18 Enameled Wire,  
L1 — Close Wound, 1/4I.D.  
L2 — Ferrite Beads of Suitable Material for  
L2 — 1.52.0 µH Total Inductance  
NOTE: For stability, the input transformer T1 must be loaded  
NOTE: with ferrite toroids or beads to increase the common  
NOTE: mode inductance. For operation below 100 MHz. The  
NOTE: same is required for the output transformer.  
Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or  
Equivalent.  
See Figure 6 for construction details of T1 and T2.  
Figure 1. 175 MHz Test Circuit  
REV 9  
2
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