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GM72V66841CT 参数 Datasheet PDF下载

GM72V66841CT图片预览
型号: GM72V66841CT
PDF下载: 下载PDF文件 查看货源
内容描述: 2,097,152字×8位×4银行同步动态RAM [2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 57 页 / 591 K
品牌: LG [ LG SEMICON CO.,LTD. ]
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LG Semicon  
GM72V66841CT/CLT  
Mode Register Configuration  
The mode register is set by the input to the  
address pins (A0 to A13) during mode register  
set cycles. The mode register consists of five  
sections, each of which is assigned to address  
pins.  
Burst read and SINGLE WRITE:  
Data is only written to the column address  
specified during the write cycle, regardless of the  
burst length.  
A7:  
A13, A12, A11, A10, A9, A8: (OPCODE):  
Keep this bit Low at the mode register set cycle.  
A6, A5, A4: (LMODE):  
These pins specify the CAS latency.  
A3: (BT):  
The synchronous DRAM has two types of write  
modes. One is the burst write mode, and the  
other is the single write mode. These bits specify  
write mode.  
Burst read and BURST WRITE:  
A burst type is specified . When full-page burst is  
performed, only "sequential" can be selected.  
Burst write is performed for the specified burst  
length starting from the column address specified  
in the write cycle.  
A2, A1, A0: (BL):  
These pins specify the burst length.  
A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0  
OPCODE  
0
LMODE  
BT  
BL  
A6 A5 A4 CAS Latency  
A3 Burst Type  
Burst Length  
BT=0 BT=1  
A2 A1 A0  
0
0
0
0
1
0
0
0
1
R
R
2
0
1
Sequential  
Interleave  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1
2
1
2
1
0
1
1
3
4
4
X
X
R
8
8
R
R
R
R
R
R
R
A13 A12 A11 A10 A9 A8  
Write mode  
F.P.  
0
0
0
0
1
1
0
1
0
1
Burst read and BURST WRITE  
0
0
X
X
X
X
X
X
X
X
R
F.P. = Full Page  
(512:GM72V66841CT/CLT)  
R is Reserved (inhibit)  
X: 0 or 1  
X
X
X
X
Burst read and SINGLE WRITE  
R
15