DC and Switching Characteristics
LatticeECP/EC Family Data Sheet
Lattice Semiconductor
DC Electrical Characteristics
Over Recommended Operating Conditions
Symbol
Parameter
Condition
0 ≤ V ≤ (V - 0.2V)
IN CCIO
Min.
—
Typ.
—
—
—
—
—
—
—
—
—
Max.
10
Units
µA
µA
µA
µA
µA
µA
µA
µA
V
1
I
I
I
I
I
I
I
I
I
1, 3
Input or I/O Leakage
IL, IH
Input or I/O High Leakage
I/O Active Pull-up Current
I/O Active Pull-down Current
Bus Hold Low sustaining current
Bus Hold High sustaining current
(V
- 0.2V) ≤ V ≤ 3.6V
—
40
IH
CCIO
IH
CCIO
0 ≤ V ≤ 0.7 V
-30
30
-150
150
—
PU
IN
V
V
V
(MAX) ≤ V ≤ V (MAX)
IN IH
PD
IL
= V (MAX)
30
BHLS
BHHS
BHLO
BHLH
IN
IN
IL
= 0.7V
-30
—
—
CCIO
Bus Hold Low Overdrive current 0 ≤ V ≤ V (MAX)
150
-150
IN
IH
Bus Hold High Overdrive current 0 ≤ V ≤ V (MAX)
—
IN
IH
V
Bus Hold trip Points
I/O Capacitance2
0 ≤ V ≤ V (MAX)
V
(MAX)
V
(MIN)
BHT
IN
IH
IL
IH
V
V
= 3.3V, 2.5V, 1.8V, 1.5V, 1.2V,
CCIO
CC
C1
C2
—
8
6
—
—
pf
pf
= 1.2V, V = 0 to V (MAX)
IO
IH
V
V
= 3.3V, 2.5V, 1.8V, 1.5V, 1.2V,
Dedicated Input Capacitance2
—
CCIO
CC
= 1.2V, V = 0 to V (MAX)
IO
IH
1. Input or I/O leakage current is measured with the pin configured as an input or as an I/O with the output driver tri-stated. It is not measured
with the output driver active. Bus maintenance circuits are disabled.
2. T 25oC, f = 1.0MHz
A
3. For top and bottom general purpose I/O pins, when V is higher than V
, a transient current typically of 30ns in duration or less with a
CCIO
IH
peak current of 6mA can occur on the high-to-low transition. For left and right I/O banks, V must be less than or equal to V
.
IH
CCIO
3-2
LATTICE [ LATTICE SEMICONDUCTOR ]
