LatticeECP/EC Family Data Sheet
DC and Switching Characteristics
February 2008
Data Sheet
Absolute Maximum Ratings1, 2, 3
Supply Voltage V . . . . . . . . . . . . . . . . . . . -0.5 to 1.32V
CC
Supply Voltage V
. . . . . . . . . . . . . . . . -0.5 to 3.75V
CCAUX
Supply Voltage V
. . . . . . . . . . . . . . . . . . -0.5 to 3.75V
CCJ
Output Supply Voltage V
. . . . . . . . . . . -0.5 to 3.75V
CCIO
Dedicated Input Voltage Applied4 . . . . . . . . -0.5 to 4.25V
I/O Tristate Voltage Applied 4 . . . . . . . . . . . . -0.5 to 3.75V
Storage Temperature (Ambient) . . . . . . . . . -65 to 150°C
Junction Temp. (Tj). . . . . . . . . . . . . . . . . . . . . . . . +125°C
1. Stress above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
2. Compliance with the Lattice Thermal Management document is required.
3. All voltages referenced to GND.
4. Overshoot and undershoot of -2V to (V
+ 2) volts is permitted for a duration of <20ns.
IHMAX
Recommended Operating Conditions
Symbol
Parameter
Min.
1.14
3.135
1.14
1.140
1.140
0
Max.
1.26
3.465
1.26
3.465
3.465
85
Units
V
V
V
V
V
V
Core Supply Voltage
CC
3
Auxiliary Supply Voltage
V
CCAUX
CCPLL
PLL Supply Voltage for ECP/EC33
I/O Driver Supply Voltage
V
1, 2
V
CCIO
1
Supply Voltage for IEEE 1149.1 Test Access Port
Junction Commercial Operation
Junction Industrial Operation
V
CCJ
t
t
°C
°C
JCOM
JIND
-40
100
1. If V
or V
is set to 1.2V, they must be connected to the same power supply as V
If V
or V
is set to 3.3V, they must be con-
CCJ
CCIO
CCJ
CC.
CCIO
nected to the same power supply as V
.
CCAUX
2. See recommended voltages by I/O standard in subsequent table.
3. V ramp rate must not exceed 3mV/µs for commercial and 0.6 mV/µs for industrial device operations during power up when transition-
CCAUX
ing between 0.8V and 1.8V.
Hot Socketing Specifications1, 2, 3, 4
Symbol
Parameter
Condition
Min.
Typ.
Max.
Units
Top and Bottom General Purpose sysI/Os (Banks 0, 1, 4 and 5), JTAG and Dedicated sysCONFIG Pins
I
Input or I/O Leakage Current
0 ≤ V ≤ V (MAX.)
—
—
+/-1000
µA
DK_TB
IN
IH
Left and Right General Purpose sysI/Os (Banks 2, 3, 6 and 7)
V
V
≤ V
—
—
—
+/-1000
—
µA
IN
IN
CCIO
I
Input or I/O Leakage Current
DK_LR
> V
35
mA
CCIO
1. Insensitive to sequence of V
V
and V
. However, assumes monotonic rise/fall rates for V
V
and V
CC, CCAUX
CCIO
CC, CCAUX CCIO.
2. 0 ≤ V ≤ V (MAX), 0 ≤ V
≤ V
(MAX) or 0 ≤ V
≤ V
(MAX).
CC
CC
CCIO
CCIO
CCAUX
CCAUX
3. I is additive to I
I
or I
.
DK
PU, PW
BH
4. LVCMOS and LVTTL only.
© 2008 Lattice Semiconductor Corp. All Lattice trademarks, registered trademarks, patents, and disclaimers are as listed at www.latticesemi.com/legal. All other brand
or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject to change without notice.
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3-1
DC and Switching_01.9
LATTICE [ LATTICE SEMICONDUCTOR ]
