Specifications
ispLSI 2064E
Switching Test Conditions
Input Pulse Levels
Input Rise and Fall Time 10% to 90%
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
3-state levels are measured 0.5V from
steady-state active level.
GND to 3.0V
1.5 ns
1.5V
1.5V
See Figure 2
Table 2-0003/2064E
Figure 2. Test Load
+ 5V
R1
Device
Output
R2
C L
*
Test
Point
Output Load Conditions (see Figure 2)
TEST CONDITION
A
B
Active High
Active Low
Active High to Z
at
V
OH
-0.5V
Active Low to Z
at
V
OL
+0.5V
R1
470Ω
∞
470Ω
∞
470Ω
R2
390Ω
390Ω
390Ω
390Ω
390Ω
CL
35pF
35pF
35pF
5pF
5pF
*
CL includes Test Fixture and Probe Capacitance.
C
Table 2-0004/2064
DC Electrical Characteristics
Over Recommended Operating Conditions
SYMBOL
PARAMETER
Output Low Voltage
Output High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
I
OL
= 8 mA
I
OH
= -4 mA
0V
≤
V
IN
≤
V
IL
(Max.)
(V
CCIO
- 0.2)V
≤
V
IN
≤
V
CCIO
V
CCIO
≤
V
IN
≤
5.25V
0V
≤
V
IN
≤
2.0V
V
CCIO
= 5.0V or 3.3V, V
OUT
= 0.5V
V
IL
= 0.0V, V
IH
= 3.0V
f
TOGGLE
= 1 MHz
CONDITION
MIN.
–
2.4
–
–
–
-10
–
–
TYP.
3
–
–
–
–
–
–
–
100
MAX. UNITS
0.4
–
-10
10
10
-250
-240
–
V
V
µA
µA
µA
µA
mA
mA
V
OL
V
OH
I
IL
I
IH
I
IL-PU
I
OS
1
I
CC
2,4,5
Table 2-0007/2064E
1. One output at a time for a maximum duration of one second. V
OUT
= 0.5V was selected to avoid test
problems by tester ground degradation. Characterized but not 100% tested.
2. Measured using four 16-bit counters.
3. Typical values are at V
CC
= 5V and T
A
= 25°C.
4. Unused inputs held at 0.0V.
5. Maximum I
CC
varies widely with specific device configuration and operating frequency. Refer to the
Power Consumption section of this data sheet and the Thermal Management section of the Lattice Semiconductor
Data Book or CD-ROM to estimate maximum I
CC
.
4
LATTICE [ LATTICE SEMICONDUCTOR ]
