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8600V 参数 Datasheet PDF下载

8600V图片预览
型号: 8600V
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V在系统可编程SuperBIG⑩高密度PLD [3.3V In-System Programmable SuperBIG⑩ High Density PLD]
分类和应用:
文件页数/大小: 26 页 / 333 K
品牌: LATTICE [ LATTICE SEMICONDUCTOR ]
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Specifications ispLSI 8600V  
1,2  
Absolute Maximum Ratings  
Supply Voltage V .................................. -0.5 to +5.4V  
cc  
Input Voltage Applied............................... -0.5 to +5.6V  
Tri-Stated Output Voltage Applied........... -0.5 to +5.6V  
Storage Temperature................................ -65 to 150°C  
Case Temp. with Power Applied .............. -55 to 125°C  
Max. Junction Temp. (T ) with Power Applied ... 150°C  
J
1. Stresses above those listed under the Absolute Maximum Ratingsmay cause permanent damage to the device. Functional  
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification  
is not implied (while programming, follow the programming specifications).  
2. Compliance with the Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM is a requirement.  
DC Recommended Operating Condition  
SYMBOL  
PARAMETER  
MIN.  
3.0  
MAX.  
3.6  
UNITS  
Supply Voltage  
Commercial TA = 0°C to 70°C  
V
V
CC  
CCIO  
I/O Supply Voltage  
2.3  
3.6  
V
V
Table 2-0005/8600V  
Capacitance (TA=25°C,f=1.0 MHz)  
SYMBOL  
PARAMETER  
TYPICAL  
UNITS  
TEST CONDITIONS  
VCC= 3.3V, V = 2.0V  
10  
10  
10  
pf  
I/O Capacitance  
C1  
C2  
C3  
I/O  
pf  
pf  
VCC= 3.3V, VCK = 2.0V  
Clock Capacitance  
Global Input Capacitance  
VCC= 3.3V, VG = 2.0V  
Table 2-0006/8600V  
Erase/Reprogram Specification  
PARAMETER  
MINIMUM  
MAXIMUM  
UNITS  
Erase/Reprogram Cycles  
10000  
Cycles  
Table 2-0008/8600V  
11