Specifications ispGDX80VA
Switching Test Conditions
Figure 8. Test Load
Input Pulse Levels
GND to VCCIO(MIN)
V
Input Rise and Fall Time
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
< 1.5ns 10% to 90%
CCIO
V
CCIO(MIN)/2
CCIO(MIN)/2
R
1
V
See Figure 8
Device
Output
Test
Point
3-state levels are measured 0.5V from steady-state active level.
R
2
C *
L
Output Load Conditions (See Figure 8)
*C includes Test Fixture and Probe Capacitance.
L
3.3V
R2
153Ω 134Ω 156Ω 144Ω 35pF
2.5V
0213D
TEST CONDITION
R1
R1
R2
CL
A
Active High
Active Low
∞
134Ω
∞
144Ω 35pF
35pF
144Ω 5pF
B
153Ω
∞
156Ω
∞
Active High to Z
at VOH-0.5V
∞
134Ω
∞
C
D
Active Low to Z
at VOL+0.5V
153Ω
∞
∞
156Ω
∞
∞
5pF
Slow Slew
∞
∞
35pF
Table 2-0004A/gdxva
DC Electrical Characteristics for 3.3V Range
Over Recommended Operating Conditions
1
SYMBOL
PARAMETER
I/O Reference Voltage
CONDITION
–
MIN.
3.0
-0.3
2.0
–
TYP. MAX. UNITS
–
–
–
–
–
–
–
3.6
0.8
5.25
0.2
0.55
–
V
V
V
V
V
V
V
V
V
V
CCIO
Input Low Voltage
Input High Voltage
VOH ≤ VOUT or VOUT ≤ VOL (MAX)
VOH ≤ VOUT or VOUT ≤ VOL(MAX)
IL
IH
IOL = +100µA
Output Low Voltage
VCC = VCC (MIN)
VOL
IOL = +24mA
–
IOH = -100µA
VCC = VCC (MIN)
2.8
2.4
Output High Voltage
VOH
IOH = -12mA
–
Table 2-0007/gdxva
1. Typical values are at VCC = 3.3V and TA = 25°C.
9
LATTICE [ LATTICE SEMICONDUCTOR ]
