Specifications ispGDX80VA
1,2
Absolute Maximum Ratings
Supply Voltage V ................................. -0.5 to +5.4V
cc
Input Voltage Applied............................... -0.5 to +5.6V
Off-State Output Voltage Applied ............ -0.5 to +5.6V
Storage Temperature................................ -65 to 150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (T ) with Power Applied ... 150°C
J
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
2. Compliance with the Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM is a requirement.
DC Recommended Operating Conditions
SYMBOL
PARAMETER
Supply Voltage
I/O Reference Voltage
MIN.
3.00
3.00
2.3
MAX.
3.60
3.60
3.60
UNITS
T
T
= 0°C to +70°C
Commercial
Industrial
V
V
V
A
A
V
V
CC
CCIO
= -40°C to +85°C
Table 2-0005/gdxva
Capacitance (TA=25oC, f=1.0 MHz)
SYMBOL
PARAMETER
I/O Capacitance
Dedicated Clock Capacitance
PACKAGE TYPE
TQFP
TYPICAL
UNITS
TEST CONDITIONS
VCC = 3.3V, V = 2.0V
7
8
pf
pf
C1
C2
I/O
TQFP
VCC= 3.3V, VY= 2.0V
Table 2-0006/gdxva
Erase/Reprogram Specifications
PARAMETER
MINIMUM
10,000
MAXIMUM
UNITS
Cycles
Erase/Reprogram Cycles
—
8
LATTICE [ LATTICE SEMICONDUCTOR ]
