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IS61LV25616AL-12KI 参数 Datasheet PDF下载

IS61LV25616AL-12KI图片预览
型号: IS61LV25616AL-12KI
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16高速异步静态CMOS与3.3V供电的RAM [256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 68 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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®
IS61LV25616AL  
ISSI  
AC WAVEFORMS  
(1 )  
WRITE CYCLE NO. 1(CE Controlled, OE is HIGH or LOW)  
1
t
WC  
VALID ADDRESS  
SCE  
ADDRESS  
CE  
2
t
SA  
t
t
HA  
t
AW  
t
PWE1  
PWE2  
3
t
WE  
t
PBW  
UB, LB  
4
t
HZWE  
t
LZWE  
HIGH-Z  
DATA UNDEFINED  
DOUT  
t
SD  
t
HD  
DATAIN VALID  
DIN  
5
UB_CEWR1.eps  
Notes:  
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least one of  
the LB and UB inputs being in the LOW state.  
2. WRITE = (CE) [ (LB) = (UB) ] (WE).  
6
7
(1,2)  
WRITE CYCLE NO. 2 (WE Controlled. OE is HIGH During Write Cycle)  
8
t
WC  
ADDRESS  
OE  
VALID ADDRESS  
t
HA  
9
LOW  
CE  
t
AW  
t
PWE1  
WE  
10  
11  
12  
t
SA  
t
PBW  
UB, LB  
t
HZWE  
t
LZWE  
HIGH-Z  
DATA UNDEFINED  
D
OUT  
t
SD  
t
HD  
DATAIN VALID  
DIN  
UB_CEWR2.eps  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. A  
9
02/21/03  
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