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IS61LV25616AL-12KI 参数 Datasheet PDF下载

IS61LV25616AL-12KI图片预览
型号: IS61LV25616AL-12KI
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16高速异步静态CMOS与3.3V供电的RAM [256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 68 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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®
IS61LV25616AL  
ISSI  
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)  
1
-10  
Min. Max.  
-12  
Min. Max.  
Symbol Parameter  
ICC VDD Dynamic Operating  
Test Conditions  
Unit  
VDD = Max.,  
IOUT = 0 mA, f = fMAX  
Com.  
Ind.  
100  
110  
90  
100  
mA  
Supply Current  
2
ISB  
TTL Standby Current  
(TTL Inputs)  
VDD = Max.,  
VIN = VIH or VIL  
CE VIH, f = fMAX.  
Com.  
Ind.  
50  
55  
45  
50  
mA  
ISB1  
TTL Standby Current  
(TTL Inputs)  
VDD = Max.,  
VIN = VIH or VIL  
CE VIH, f = 0  
Com.  
Ind.  
20  
25  
20  
25  
mA  
mA  
3
ISB2  
CMOS Standby  
Current (CMOS Inputs)  
VDD = Max.,  
Com.  
Ind.  
15  
20  
15  
20  
4
CE VDD – 0.2V,  
VIN VDD – 0.2V, or  
VIN 0.2V, f = 0  
Note:  
5
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.  
Shaded area product in development  
6
CAPACITANCE(1)  
Symbol  
CIN  
Parameter  
Conditions  
VIN = 0V  
Max.  
Unit  
pF  
7
InputCapacitance  
Input/OutputCapacitance  
6
8
COUT  
VOUT = 0V  
pF  
Note:  
8
1. Tested initially and after any design or process changes that may affect these parameters.  
9
10  
11  
12  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. A  
5
02/21/03  
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