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IS61LV12816L-10BLI 参数 Datasheet PDF下载

IS61LV12816L-10BLI图片预览
型号: IS61LV12816L-10BLI
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16高速CMOS静态RAM与3.3V电源 [128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY]
分类和应用:
文件页数/大小: 16 页 / 112 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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®
ISSI  
IS61LV12816L  
AC TEST CONDITIONS  
Parameter  
Unit  
0V to 3.0V  
3 ns  
Input Pulse Level  
Input Rise and Fall Times  
Input and Output Timing  
andReferenceLevel  
1.5V  
OutputLoad  
See Figures 1 and 2  
AC TEST LOADS  
319  
3.3V  
ZO = 50Ω  
50Ω  
1.5V  
OUTPUT  
OUTPUT  
30 pF  
Including  
jig and  
scope  
353 Ω  
5 pF  
Including  
jig and  
scope  
Figure 1.  
Figure 2.  
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)  
-8 ns  
-10 ns  
Symbol  
tRC  
Parameter  
Min.  
Max  
Min. Max.  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Read Cycle Time  
8
3
10  
3
10  
10  
4
tAA  
Address Access Time  
Output Hold Time  
8
tOHA  
tACE  
CE Access Time  
0
8
0
tDOE  
OE Access Time  
3.5  
3.5  
(2)  
tHZOE  
OE to High-Z Output  
OE to Low-Z Output  
CE to High-Z Output  
CE to Low-Z Output  
LB, UB Access Time  
LB, UB to High-Z Output  
LB, UB to Low-Z Output  
4
(2)  
tLZOE  
4
(2)  
tHZCE  
0
3.5  
0
(2)  
tLZCE  
3.5  
0
3
4
tBA  
3.5  
3.5  
0
(2)  
tHZB  
4
(2)  
tLZB  
0
0
Notes:  
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to  
3.0V and output loading specified in Figure 1.  
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.  
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. F  
10/27/05  
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