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IS61LV12816L-10BLI 参数 Datasheet PDF下载

IS61LV12816L-10BLI图片预览
型号: IS61LV12816L-10BLI
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16高速CMOS静态RAM与3.3V电源 [128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY]
分类和应用:
文件页数/大小: 16 页 / 112 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS61LV12816L  
ISSI  
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)  
-8 ns  
Min. Max.  
-10 ns  
Min. Max.  
Symbol  
Parameter  
Test Conditions  
Unit  
ICC  
VDD Operating  
Supply Current  
VDD = Max., CE = VIL  
IOUT = 0 mA, f = Max.  
Com.  
Ind.  
65  
70  
50  
60  
65  
50  
mA  
typ.(2)  
ISB1  
TTL Standby  
Current  
(TTL Inputs)  
VDD = Max.,  
VIN = VIH or VIL  
CE VIH, f = max  
Com.  
Ind.  
30  
35  
25  
30  
mA  
ISB2  
CMOS Standby  
Current  
(CMOS Inputs)  
VDD = Max.,  
CE VDD – 0.2V,  
VIN VDD – 0.2V, or  
Com.  
Ind.  
3
4
700  
3
4
700  
mA  
mA  
µA  
typ.(2)  
VIN 0.2V, f = 0  
Note:  
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.  
2. Typical values are measured at VDD=3.3V, TA=25oC. Not 100% tested.  
CAPACITANCE(1)  
Symbol  
CIN  
Parameter  
Conditions  
VIN = 0V  
Max.  
Unit  
pF  
InputCapacitance  
Input/OutputCapacitance  
6
8
COUT  
VOUT = 0V  
pF  
Note:  
1. Tested initially and after any design or process changes that may affect these parameters.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. F  
5
10/27/05  
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