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IS61LV12816L-10BLI 参数 Datasheet PDF下载

IS61LV12816L-10BLI图片预览
型号: IS61LV12816L-10BLI
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16高速CMOS静态RAM与3.3V电源 [128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY]
分类和应用:
文件页数/大小: 16 页 / 112 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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®
ISSI  
IS61LV12816L  
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol  
VDD  
Parameter  
Value  
–0.5 to 4.0V  
–0.5 to VDD + 0.5  
–65 to + 150  
1.0  
Unit  
V
Power Supply Voltage Relative to GND  
Terminal Voltage with Respect to GND  
StorageTemperature  
VTERM  
TSTG  
PT  
V
°C  
W
PowerDissipation  
Note:  
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is  
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the opera-  
tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may  
affect reliability.  
OPERATING RANGE  
Range  
AmbientTemperature  
0°C to +70°C  
VDD (8 nS)  
VDD (10 nS)  
3.3V + 10%  
3.3V + 10%  
Commercial  
Industrial  
3.3V + 10%, -5%  
3.3V + 10%, -5%  
–40°Cto+85°C  
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)  
Symbol Parameter  
TestConditions  
Min.  
2.4  
Max.  
Unit  
V
VOH  
VOL  
VIH  
VIL  
ILI  
OutputHIGHVoltage  
VDD = Min., IOH = –4.0 mA  
VDD = Min., IOL = 8.0 mA  
OutputLOWVoltage  
InputHIGHVoltage(1)  
InputLOWVoltage(1)  
InputLeakage  
0.4  
V
2
VDD + 0.3  
V
–0.3  
–1  
0.8  
1
V
GND VIN VDD  
µA  
µA  
ILO  
OutputLeakage  
GND VOUT VDD, Outputs Disabled  
–1  
1
Note:  
1.  
VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.  
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.  
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. F  
10/27/05  
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