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IS42S32200-7T 参数 Datasheet PDF下载

IS42S32200-7T图片预览
型号: IS42S32200-7T
PDF下载: 下载PDF文件 查看货源
内容描述: 512K位×32位×4 ,银行(64 - MBIT )同步动态RAM [512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 55 页 / 977 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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®
IS42S32200  
ISSI  
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol  
Parameters  
Rating  
Unit  
VCC MAX  
VCCQ MAX  
VIN  
Maximum Supply Voltage  
Maximum Supply Voltage for Output Buffer  
Input Voltage  
Output Voltage  
Allowable Power Dissipation  
Output Shorted Current  
–1.0 to +4.6  
–1.0 to +4.6  
–1.0 to +4.6  
–1.0 to +4.6  
1
50  
0 to +70  
–40 to +85  
V
V
V
VOUT  
V
PD MAX  
ICS  
W
mA  
°C  
TOPR  
Operating Temperature  
Com.  
Ind.  
TSTG  
Storage Temperature  
–55 to +150  
°C  
DC RECOMMENDED OPERATING CONDITIONS(2,5) (At TA = 0 to +70°C)  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
VCC,VCCQ  
VIH  
SupplyVoltage  
3.0  
2.0  
-0.3  
3.3  
3.6  
VCC + 0.3  
+0.8  
V
V
V
Input High Voltage(3)  
Input Low Voltage(4)  
VIL  
VOH  
VOL  
OutputHighVoltage(7)  
Output Low Voltage(7)  
2.4  
V
V
0.4  
CAPACITANCE CHARACTERISTICS(1,2) (At TA = 0 to +25°C, Vcc = VccQ = 3.3 0.3V, f = 1 MHz)  
Symbol  
Parameter  
Typ.  
Max.  
Unit  
CIN1  
CIN2  
CI/O  
Input Capacitance: A0-A10, BA0, BA1  
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM)  
DataInput/OutputCapacitance:I/O0-I/O31  
4
4
5
pF  
pF  
pF  
Notes:  
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a  
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect  
reliability.  
2. All voltages are referenced to GND.  
3. VIH (max) = VCCQ + 2.0V with a pulse width 3 ns. The pluse width cannot be greater than one third of the cycle rate.  
4. VIL (min) = GND – 2.0V with a pulse < 3 ns. The pluse width cannot be greater than one third of the cycle rate.  
5. An initial pause of 100us is required after power up, followed by two AUTO REFRESH commands, before proper device operation  
is ensured. (Vcc and VccQ must be powered up simultaneously. GND and GNDQ must be at same potential.) The two AUTO  
REFRESH command wake-ups should be repeated anytime the tREF refresh requirement is exceeded.  
6. IOUT = -4mA  
7. IOUT = 4mA  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
31  
ADVANCE INFORMATION Rev. 00B  
08/14/03  
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