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IC42S16160C-6TL 参数 Datasheet PDF下载

IC42S16160C-6TL图片预览
型号: IC42S16160C-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 40 页 / 1538 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS42S83200C
IS42S16160C,
IC42S16160C
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
Symbol
-6
Min
6
10
5.4
-7
Max
Min
7
10
5.4
5.4
-75
Max
Min
75
Max
Unit
Note
CAS latency=3
CLK cycle time
CAS latency=2
CAS latency=3
CLK to valid output delay
CAS latency=2
CAS latency=3
Output data hold time
CAS latency=2
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
Transition time of CLK
CAS latency=3
CLK to output in Hi-Z
CAS latency=2
t
CC (3)
t
CC (2)
t
SAC (3)
t
SAC (2)
t
OH (3)
t
OH (2)
t
CH
t
CL
t
SI
t
HI
t
T
ns
10
5.4
ns
6
2.5
ns
2.5
2.5
2.5
1.5
1.0
0.3
1.5
5.4
t
SHZ
5.4
6
1
1,2
2.5
2.5
2
2.5
2.5
2.5
1.5
1.0
1.5
5.4
2.5
2.5
1.5
1.0
0.3
ns
ns
ns
ns
1.5
5.4
ns
3
3
3
3
0.3
ns
NOTES :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00D
05/29/08
9