IS42S83200C
IS42S16160C,
IC42S16160C
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
ss
Voltage on V
DD
supply relative to V
ss
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
,V
OUT
V
DD
, V
DDQ
T
STG
P
D
I
OS
Value
-0.5 ~ 4.6
-0.5 ~ 4.6
-65 ~ +150
1.0
50
Unit
V
V
±
C
W
mA
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Parameter
Supply voltage
Recommended operating conditions (Voltage referenced to V
SS
= 0V,
T
A
= 0 to 70 ––
C)
Symbol
Vdd
V
ddQ
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
Min
3.0
3.0
2.0
-0.3
2.4
-
-5
-5
Typ
3.3
3.3
Max
3.6
3.6
V
DDQ
+ 0.3
Unit
V
V
V
V
V
V
uA
uA
Note
V
IH
V
IL
V
OH
V
OL
I
LI
I
oL
1
2
I
OH
= -0.1mA
I
OL
= 0.1mA
3
3
0
-
-
-
-
0.8
-
0.4
5
5
Note:
1. VIH(max) = 4.6V AC for pulse width 10ns acceptable.
2. VIL(min) = -1.5V AC for pulse width 10ns acceptable.
3. Any input 0V VIN VDD + 0.3V, all other pins are not under test = 0V.
4. Dout is disabled , 0V VOUT VDD.
CAPACITANCE
Clock
( Vdd =3.3V,
T
A
= 25°
f = 1MHz …
C,
Symbol
Cclk
Cin
C
ADD
C
OUT
Parameter
Min
2.5
2.5
2.5
4.0
Max
4.0
5.0
5.0
6.5
Unit
pF
pF
pF
pF
Note
/CAS,/RAS,/WE,/CS,CKE,L/UDQM
Address
DQ0~DQ15
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00D
05/29/08
5
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
