IS42S16100E, IC42S16100E
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
i
il
Input Leakage Current
i
ol
V
oh
V
ol
i
cc1
Output Leakage Current
Test Condition
0V
≤
V
iN
≤
Vdd, with pins other than
the tested pin at 0V
Output is disabled, 0V
≤
V
out
≤
Vdd
Speed
Min.
–5
–5
2.4
-5
-6
-7
-6
-7
—
—
—
—
—
—
—
-5
-6
-6
-7
-7
-5
-6
-6
-7
-7
-5
-6
-6
-7
-7
-5
-6
-6
-7
-7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
5
5
—
0.4
170
160
140
170
160
3
4
2
—
40
30
30
170
150
170
130
150
170
150
170
130
150
120
100
110
70
90
120
100
110
70
90
2
Unit
µA
µA
V
V
mA
Output High Voltage Level
i
out
= –2 mA
Output Low Voltage Level
i
out
= +2 mA
Operating Current
(1,2)
One Bank Operation,
CAS
latency = 3 Com.
Burst Length=1
t
rc
≥
t
rc
(min.)
I
out
= 0mA
Com.
Com.
Ind.
Ind.
Com.
Ind.
Com.
Ind.
Com.
Ind.
i
cc2p
I
cc2ps
i
cc3N
I
cc3Ns
i
cc4
Precharge Standby Current CKE
≤
V
il
(
max
)
(In Power-Down Mode)
Active Standby Current
CKE
≥
V
ih
(
miN
)
(In Non Power-Down Mode)
Operating Current
(In Burst Mode)
(1)
t
ck
= t
ck
(
miN
)
I
out
= 0mA
t
ck
= t
ck
(
miN
)
t
ck
=
∞
t
ck
= t
ck
(
miN
)
t
ck
=
∞
mA
mA
i
cc5
Auto-Refresh Current
t
rc
= t
rc
(
miN
)
CAS
latency = 3 Com.
Com.
Ind.
Com.
Ind.
CAS
latency = 2
Com.
Com.
Ind.
Com.
Ind.
CAS
latency = 3 Com.
Com.
Ind.
Com.
Ind.
CAS
latency = 2 Com.
Com.
Ind.
Com.
Ind.
mA
mA
mA
mA
i
cc6
Self-Refresh Current
CKE
≤
0.2V
mA
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time in-
creases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between V
dd
and GND for each memory chip
to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc
1
and Icc
4
depend on the output load. The maximum values for Icc
1
and Icc
4
are obtained with the output open state.
6
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
01/22/08
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
