IS42S16100E, IC42S16100E
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
dd max
V
ddq
V
iN
V
out
P
d max
I
cs
T
opr
T
stg
max
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
output
Shorted Current
operating
Temperature
Storage Temperature
Com
Ind.
Rating
Unit
–1.0 to +4.6 V
–1.0 to +4.6 V
–1.0 to +4.6 V
–1.0 to +4.6 V
1
50
0 to +70
-40 to +85
W
mA
°C
°C
–55 to +150 °C
DC RECOMMENDED OPERATING CONDITIONS
(2)
(
At T
a
= 0 to +70°C)
Symbol
V
dd
, V
ddq
V
ih
V
il
Parameter
Supply Voltage
Input High Voltage
(3)
Input Low Voltage
(4)
Min.
3.0
2.0
-0.3
Typ.
3.3
—
—
Max.
3.6
V
dd
+ 0.3
+0.8
Unit
V
V
V
CAPACITANCE CHARACTERISTICS
(1,2)
(At T
a
= 0 to +25°C, VDD = VDDQ = 3.3 ± 0.3V, f = 1 MHz)
Symbol
C
iN
1
C
iN
2
CI/O
Parameter
Input Capacitance: A0-A11
Input Capacitance: (CLK, CKE,
CS, RAS, CAS, WE,
LDQM, UDQM)
Data Input/Output Capacitance: DQ0-DQ15
Typ.
—
—
—
Max.
4
4
5
Unit
pF
pF
pF
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2. All voltages are referenced to GND.
3. V
ih
(max) = V
ddq
+ 2.0V with a pulse width
≤
3 ns.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
01/22/08
5
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
