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IC41LV82052-60T 参数 Datasheet PDF下载

IC41LV82052-60T图片预览
型号: IC41LV82052-60T
PDF下载: 下载PDF文件 查看货源
内容描述: [Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28,]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 18 页 / 195 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IC41C82052  
IC41LV82052  
ꢀunctional Description  
Refresh Cycle  
The IC41C82052 and IC41LV82052 are CMOS DRAMs  
optimized for high-speed bandwidth, low power  
applications. During READ or WRITE cycles, each bit is  
uniquely addressed through the 11 address bits. These  
are entered 11 bits (A0-A10) at a time for the 2K refresh  
device. The row address is latched by the Row Address  
Strobe (RAS). The column address is latched by the  
Column Address Strobe (CAS). RAS is used to latch the  
first nine bits and CAS is used the latter ten bits.  
To retain data, 2,048 refresh cycles are required in each  
32 ms period. There are two ways to refresh the memory:  
1. By clocking each of the 2,048 row addresses (A0  
through A10) with RAS at least once every 32 ms. Any  
read, write, read-modify-write or RAS-only cycle re-  
freshes the addressed row.  
2. Using a CAS-before-RAS refresh cycle. CAS-before-  
RAS refresh is activated by the falling edge of RAS,  
while holding CAS LOW. In CAS-before-RAS refresh  
cycle, an internal 11-bit counter provides the row ad-  
dresses and the external address inputs are ignored.  
Memory Cycle  
A memory cycle is initiated by bring RAS LOW and it is  
terminated by returning both RAS and CAS HIGH. To  
ensures proper device operation and data integrity any  
memory cycle, once initiated, must not be ended or  
aborted before the minimum tRAS time has expired. A new  
cycle must not be initiated until the minimum precharge  
time tRP, tCP has elapsed.  
CAS-before-RAS is a refresh-only mode and no data  
access or device selection is allowed. Thus, the output  
remains in the High-Z state during the cycle.  
Power-On  
After application of the VCC supply, an initial pause of  
200 µs is required followed by a minimum of eight initial-  
ization cycles (any combination of cycles containing a  
RAS signal).  
Read Cycle  
A read cycle is initiated by the falling edge of CAS or OE,  
whichever occurs last, while holding WE HIGH. The  
column address must be held for a minimum time specified  
by tAR. Data Out becomes valid only when tRAC, tAA, tCAC  
and tOEA are all satisfied. As a result, the access time is  
dependent on the timing relationships between these  
parameters.  
During power-on, it is recommended that RAS track with  
VCC or be held at a valid VIH to avoid current surges.  
Write Cycle  
A write cycle is initiated by the falling edge of CAS and WE,  
whichever occurs last. The input data must be valid at or  
before the falling edge of CAS or WE, whichever occurs  
last.  
Integrated Circuit Solution Inc.  
DR015-0A 06/12/2001  
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