AS7C33512NTF18A
®
DC electrical characteristics for 3.3V I/O operation
Parameter
Input leakage current1
Output leakage current
Sym
|ILI|
Conditions
VDD = Max, 0V < VIN < VDD
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
Address and control pins
I/O pins
Min
-2
Max
Unit
µA
2
|ILO
|
-2
2
VDD+0.3
VDDQ+0.3
0.8
µA
2
Input high (logic 1) voltage
Input low (logic 0) voltage
VIH
V
V
2
Address and control pins
I/O pins
-0.3*
-0.5*
2.4
–
VIL
0.8
Output high voltage
Output low voltage
VOH
VOL
IOH = –4 mA, VDDQ = 3.135V
IOL = 8 mA, VDDQ = 3.465V
–
V
V
0.4
1 LBO, and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10 µA.
DC electrical characteristics for 2.5V I/O operation
Parameter
Input leakage current
Output leakage current
Sym
|ILI|
Conditions
VDD = Max, 0V < VIN < VDD
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
Address and control pins
I/O pins
Min
-2
Max
Unit
2
µA
µA
V
|ILO
|
-2
2
VDD+0.3
VDDQ+0.3
0.7
1.7
1.7
-0.3*
-0.3*
1.7
–
Input high (logic 1) voltage
Input low (logic 0) voltage
VIH
V
Address and control pins
I/O pins
V
VIL
0.7
V
Output high voltage
Output low voltage
VOH
VOL
IOH = –4 mA, VDDQ = 2.375V
IOL = 8 mA, VDDQ = 2.625V
–
V
0.7
V
*VIL min = -1.5 for pulse width less than 0.2 X tCYC
I
operating conditions and maximum limits
DD
Parameter
Operating power supply current1
Sym
ICC
ISB
Conditions
-65
-75
225
100
Unit
CE0 = VIL, CE1 = VIH, CE2 = VIL, f = fMax, IOUT = 0 mA
Deselected, f = fMax, ZZ < VIL
250
120
mA
Deselected, f = 0, ZZ < 0.2V,
all VIN ≤ 0.2V or ≥ VDD – 0.2V
Standby power supply current
ISB1
30
30
30
30
mA
ISB2 Deselected, f = f , ZZ
≥
V
– 0.2V, all VIN ≤ VIL or ≥ VIH
Max
DD
1 I given with no output loading. I increases with faster cycle times and greater output loading.
CC
CC
7/12/04, v. 1.0
Alliance Semiconductor
P. 7 of 14
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
