AS7C331MFT18A
®
DC electrical characteristics for 3.3V I/O operation
Parameter
Input leakage current†
Output leakage current
Sym
Conditions
VDD = Max, 0V < VIN < VDD
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
Address and control pins
I/O pins
Min
-2
Max
Unit
µA
|ILI|
2
2
|ILO
|
-2
µA
2*
VDD+0.3
Input high (logic 1) voltage
Input low (logic 0) voltage
VIH
VIL
V
V
2*
V
DDQ+0.3
Address and control pins
I/O pins
-0.3**
-0.5**
2.4
0.8
0.8
–
Output high voltage
Output low voltage
VOH
VOL
IOH = –4 mA, VDDQ = 3.135V
IOL = 8 mA, VDDQ = 3.465V
V
V
–
0.4
DC electrical characteristics for 2.5V I/O operation
Parameter
Input leakage current†
Output leakage current
Sym
Conditions
Min
-2
Max
Unit
µA
µA
V
|ILI|
VDD = Max, 0V < VIN < VDD
2
2
|ILO
|
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
Address and control pins
I/O pins
-2
1.7*
1.7*
-0.3**
-0.3**
1.7
VDD+0.3
Input high (logic 1) voltage
Input low (logic 0) voltage
VIH
VIL
V
DDQ+0.3
V
Address and control pins
I/O pins
0.7
0.7
–
V
V
Output high voltage
Output low voltage
VOH
VOL
IOH = –4 mA, VDDQ = 2.375V
IOL = 8 mA, VDDQ = 2.625V
V
–
0.7
V
† LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10 µA.
*
V
max < VDD +1.5V for pulse width less than 0.2 X t
CYC
IH
**
V
min = -1.5 for pulse width less than 0.2 X t
CYC
IL
IDD operating conditions and maximum limits
-68
-75
-85
-10
Parameter
Sym
ICC
ISB
Conditions
Unit
Max Typ Max Max Max
CE0 < VIL, CE1 > VIH, CE2 < VIL, f = fMax
,
Operating power supply current1
285 225
275
90
250 230 mA
IOUT = 0 mA, ZZ < VIL
All VIN ≤ 0.2V or >
V
– 0.2V, Deselected,
DD
90
70
80
80
f = fMax, ZZ < VIL
Deselected, f = 0, ZZ < 0.2V,
all VIN ≤ 0.2V or ≥ VDD – 0.2V
Standby power supply current
mA
ISB1
ISB2
60
50
40
30
60
50
60
50
60
50
Deselected, f = f , ZZ
≥
V
– 0.2V,
Max
DD
all VIN ≤ VIL or ≥ VIH
1 I given with no output loading. I increases with faster cycle times and greater output loading.
CC
CC
1/21/05, v 1.4
Alliance Semiconductor
9 of 19
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
