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AS7C331MFT18A-85TQIN 参数 Datasheet PDF下载

AS7C331MFT18A-85TQIN图片预览
型号: AS7C331MFT18A-85TQIN
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 1MX18, 8.5ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100]
分类和应用: 时钟静态存储器内存集成电路
文件页数/大小: 19 页 / 512 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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AS7C331MFT18A  
®
Absolute maximum ratings  
Parameter  
Power supply voltage relative to GND  
Input voltage relative to GND (input pins)  
Input voltage relative to GND (I/O pins)  
Power dissipation  
Symbol  
, V  
Min  
–0.5  
–0.5  
–0.5  
Max  
Unit  
V
V
+4.6  
DD  
DDQ  
V
V
+ 0.5  
DD  
V
IN  
IN  
V
V
+ 0.5  
V
DDQ  
P
1.8  
W
D
DC output current  
I
20 mA  
+150  
mA  
OUT  
o
Storage temperature  
T
–65  
–65  
C
stg  
o
Temperature under bias  
T
+135  
C
bias  
Note: Stresses greater than those listed in this table may cause permanent damage to the device. This is a stress rating only, and functional operation of the  
device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum  
rating conditions may affect reliability.  
Recommended operating conditions at 3.3V I/O  
Parameter  
Supply voltage for inputs  
Supply voltage for I/O  
Ground supply  
Symbol  
VDD  
Min  
3.135  
3.135  
0
Nominal  
Max  
3.465  
3.465  
0
Unit  
V
3.3  
3.3  
0
VDDQ  
Vss  
V
V
Recommended operating conditions at 2.5V I/O  
Parameter  
Supply voltage for inputs  
Supply voltage for I/O  
Ground supply  
Symbol  
VDD  
Min  
3.135  
2.375  
0
Nominal  
Max  
3.465  
2.625  
0
Unit  
V
3.3  
2.5  
0
VDDQ  
Vss  
V
V
1/21/05, v 1.4  
Alliance Semiconductor  
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