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66WVE4M16ALL-70TLI 参数 Datasheet PDF下载

66WVE4M16ALL-70TLI图片预览
型号: 66WVE4M16ALL-70TLI
PDF下载: 下载PDF文件 查看货源
内容描述: [Pseudo Static RAM, 4MX16, 70ns, CMOS, PDSO48, TSOP1-48]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 30 页 / 676 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS66WVE4M16ALL  
Advanced Information  
Configuration Registers Operation  
The configuration register (CR) defines how the PSRAM device performs a transparent self refresh.  
Altering the refresh parameters can dramatically reduce current consumption during standby mode.  
Page mode controls is embedded in the CR. This register can be updated any time the device is  
operating in a standby state. The control bits used in the CR are shown in Table 3. At power-up,  
the CR is set to 0010h.  
Access Using ZZ#  
The CR can be loaded using a WRITE operation immediately after ZZ# makes a HIGH-to-LOW  
transition (see Figure 5). The values placed on addresses A[21:0] are latched into the CR on the  
rising edge of CE# or WE#, whichever occurs first. LB#/UB# are “Don’t Care.” Access using ZZ#  
is WRITE only.  
Figure 5: Load Configuration Register Operation Using ZZ#  
VALID  
ADDRESS  
Address  
CE#  
WE#  
t < 500ns  
ZZ#  
13  
www.issi.com - SRAM@issi.com  
Rev.00C | March 2010