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IRS20124S 参数 Datasheet PDF下载

IRS20124S图片预览
型号: IRS20124S
PDF下载: 下载PDF文件 查看货源
内容描述: 离散死区时间和保护数字音频驱动 [DIGITAL AUDIO DRIVER WITH DISCRETE DEAD-TIME AND PROTECTION]
分类和应用: 驱动
文件页数/大小: 24 页 / 218 K
品牌: INFINEON [ Infineon ]
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IRS20124S(PbF)  
tionship between output current direction and  
the current in the low side MOSFET. It should be  
noted that each MOSFET carries a part of the  
load current in an audio cycle. Bi-directional cur-  
rent sensing offers over current detection capa-  
bilities in both cases by monitoring only the low  
side MOSFET.  
IRS20124 measures the current during the period  
when the low side MOSFET is turned on. Fig.10  
illustrates how an excessive voltage at Vs node  
detects an over current condition. Under normal  
operating conditions, Vs voltage for the low side  
switch is well within the trip threshold boundaries,  
VSOC- and VSOC+. In the case of Fig.9(b) which dem-  
onstrates the amplifier sourcing too much current  
to the load, the Vs node is found below the trip  
level, VSOC-. In Fig.9(c) with opposite current direc-  
tion, the amplifier sinks too much current from the  
load, positioning Vs well above trip level, VSOC+.  
Load Current  
0
Once the voltage in Vs exceeds the preset thresh-  
old, the OC pin pulls down to COM to detect an  
over current condition.  
Since the switching waveform usually contains  
over/under shoot and associated oscillatory arti-  
facts on their transient edges, a 200ns blanking  
interval is inserted in the Vs voltage sensing block  
at the instant the low side switch is engaged.  
Because of this blanking interval, the OC function  
will be unable to detect over current conditions if  
the low side ON duration less than 200ns.  
Figure 9. Direction in MMOSFET Current and Load  
Current  
Bi-directional Current Sensing  
IRS20124 has an over current detection function  
utilizing RDS(ON) of the low side switch as a current  
sensing shunt resistor. Due to the proprietary HVIC  
process, the IRS20124 is able to sense negative  
as well as positive current flow, enabling bi-direc-  
tional load current sensing without the need for  
any additional external passive components.  
LO  
Vs  
+
-
OCSET1  
OC  
AND  
OR  
OCSET2  
+
-
vs  
~
~
~
~
~
~
~
~
~
~
~
~
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~
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Figure 11. Simplified Functional Block Diagram of  
Bi-Directional Current Sensing  
Vsoc+  
COM  
Vsoc-  
As shown in Fig.11, bi-directional current sens-  
ing block has an internal 2.0V level shifter feeding  
the signal to the comparator. OC  
sets the posi-  
tive side threshold, and is given aStEriTp1 level at VSOC+  
,
(a) Normal Operation  
Condition  
(b) Over- Current in  
Positive Load Current  
(c) Over- Current in  
Negative Load Current  
which is OCSET1 - 2.0V. In same way, for a given  
OCSET2, VSOC- is set at OCSET2 – 2.0V  
Figure 10. Vs Waveform in Over-current Condition  
22  
www.irf.com  
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