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IRL7486MTRPBF 参数 Datasheet PDF下载

IRL7486MTRPBF图片预览
型号: IRL7486MTRPBF
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, 209A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET]
分类和应用: 开关脉冲晶体管
文件页数/大小: 11 页 / 505 K
品牌: INFINEON [ Infineon ]
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IRL7486MTRPbF  
Dynamic @ TJ = 25°C (unless otherwise specified)  
Symbol  
Parameter  
Forward Transconductance  
Total Gate Charge  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Total Gate Charge Sync. (Qg - Qgd)  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
Min. Typ. Max. Units  
Conditions  
DS = 10V, ID = 123A  
gfs  
Qg  
427 ––– –––  
S
V
–––  
–––  
–––  
–––  
–––  
76  
27  
33  
41  
35  
111  
–––  
–––  
–––  
–––  
ID = 123A  
Qgs  
Qgd  
Qsync  
td(on)  
tr  
VDS = 20V  
nC  
VGS = 4.5V   
ID = 123A, VDS =0V, VGS = 10V  
VDD = 20V  
––– 110 –––  
ID = 30A  
ns  
td(off)  
tf  
–––  
–––  
54  
47  
–––  
–––  
RG = 2.7  
VGS = 4.5V   
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
––– 6904 –––  
––– 939 –––  
––– 607 –––  
V
GS = 0V  
VDS = 25V  
ƒ = 1.0MHz  
pF  
C
C
oss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1150 –––  
oss eff. (TR) Effective Output Capacitance (Time Related) ––– 1376 –––  
VGS = 0V, VDS = 0V to 32V   
VGS = 0V, VDS = 0V to 32V   
Diode Characteristics  
Symbol Parameter  
Min. Typ. Max. Units  
Conditions  
D
IS  
Continuous Source Current  
(Body Diode)  
Pulsed Source Current  
(Body Diode)   
MOSFET symbol  
showing the  
integral reverse  
p-n junction diode.  
––– –––  
––– –––  
104  
836  
A
V
G
ISM  
S
VSD  
Diode Forward Voltage  
––– ––– 1.2  
TJ= 25°C,IS =123A, VGS = 0V  
dv/dt  
Peak Diode Recovery   
TJ =150°C,IS =123A,  
VDS = 40V  
––– 3.6 ––– V/ns  
trr  
Reverse Recovery Time  
–––  
–––  
–––  
–––  
43  
44  
55  
56  
–––  
–––  
–––  
–––  
TJ = 25° C VR = 34V,  
ns  
IF = 123A  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
di/dt = 100A/µs   
Qrr  
IRRM  
Reverse Recovery Charge  
Reverse Recovery Current  
nC  
A
––– 2.1 –––  
Notes:  
Coss eff. (ER) is a fixed capacitance that gives the  
Repetitive rating; pulse width limited by max. junction  
temperature.  
same energy as Coss while VDS is rising from 0 to  
80% VDSS  
.
Limited by TJmax, starting TJ = 25°C, L = 0.011mH  
Ris measured at TJ approximately 90°C.  
RG = 50, IAS = 123A, VGS =10V.  
This value determined from sample failure population,  
ISD 123A, di/dt 1056A/µs, VDD V(BR)DSS, TJ 150°C.  
Pulse width 400µs; duty cycle 2%.  
starting TJ = 25°C, L= 0.011mH, RG = 50, IAS = 123A,  
V
GS =10V.  
Coss eff. (TR) is a fixed capacitance that gives the same  
charging time as Coss while VDS is rising from 0 to 80%  
Limited by TJmax, starting TJ = 25°C, L = 1.0mH  
RG = 50, IAS = 20A, VGS =10V.  
VDSS  
.
3
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© 2015 International Rectifier  
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May 14, 2015  
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