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IRL7486MTRPBF 参数 Datasheet PDF下载

IRL7486MTRPBF图片预览
型号: IRL7486MTRPBF
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, 209A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET]
分类和应用: 开关脉冲晶体管
文件页数/大小: 11 页 / 505 K
品牌: INFINEON [ Infineon ]
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IRL7486MTRPbF  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Parameter  
Max.  
209  
132  
836  
Units  
A
Pulsed Drain Current   
Maximum Power Dissipation  
Linear Derating Factor  
IDM  
104  
PD @TC = 25°C  
W
W/°C  
V
0.83  
Gate-to-Source Voltage  
Operating Junction and  
Storage Temperature Range  
± 20  
VGS  
TJ  
TSTG  
-55 to + 150  
°C  
Avalanche Characteristics  
EAS (Thermally limited) Single Pulse Avalanche Energy   
80  
mJ  
Single Pulse Avalanche Energy   
Single Pulse Avalanche Energy Tested Value   
Avalanche Current   
EAS (Thermally limited)  
EAS (tested)  
IAR  
190  
111  
A
See Fig.15,16, 23a, 23b  
EAR  
Repetitive Aval`anche Energy   
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
12.5  
20  
Max.  
60  
Units  
Junction-to-Ambient   
RJA  
Junction-to-Ambient   
Junction-to-Ambient   
Junction-to-Case   
Junction-to-PCB Mounted  
–––  
–––  
1.2  
RJA  
°C/W  
RJA  
RJC  
–––  
0.75  
–––  
RJ-PCB  
Static @ TJ = 25°C (unless otherwise specified)  
Symbol  
V(BR)DSS  
Parameter  
Min. Typ. Max. Units  
Conditions  
VGS = 0V, ID = 250µA  
Drain-to-Source Breakdown Voltage  
Breakdown Voltage Temp. Coefficient  
Static Drain-to-Source On-Resistance  
40  
––– –––  
V
–––  
35 ––– mV/°C Reference to 25°C, ID = 1.0mA  
V(BR)DSS/TJ  
RDS(on)  
––– 1.0 1.25  
––– 1.5 2.0  
1.0 1.8 2.5  
VGS = 10V, ID = 123A   
m  
V
GS = 4.5V, ID = 62A   
VDS = VGS, ID = 150µA  
VGS(th)  
IDSS  
Gate Threshold Voltage  
V
––– ––– 1.0  
––– ––– 150  
––– ––– 100  
––– ––– -100  
––– 0.97 –––  
V
DS = 40V, VGS = 0V  
Drain-to-Source Leakage Current  
µA  
V
DS = 40V, VGS = 0V, TJ = 125°C  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Internal Gate Resistance  
VGS = 20V  
GS = -20V  
nA  
V
RG  
Notes:  
Mounted on minimum footprint full size board with metalized  
back and with small clip heatsink.  
TC measured with thermocouple mounted to top (Drain) of part.  
Used double sided cooling , mounting pad with large heatsink.  
Mounted to a PCB with small clip  
heatsink (still air)  
Mounted on minimum footprint full size  
board with metalized back and with  
small clip heatsink (still air)  
Surface mounted on 1 in. square Cu  
board (still air).  
2
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© 2015 International Rectifier  
Submit Datasheet Feedback  
May 14, 2015  
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