IRFP4368PbF
10000
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100
10
1
100µsec
T
= 25°C
J
1msec
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
DC
10
1
0.1
1
100
0.0
0.4
0.8
1.2
1.6
2.0
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
350
95
90
85
80
75
70
Id = 5.0mA
300
250
200
150
100
50
Limited By Package
0
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
T
, Case Temperature (°C)
T , Temperature ( °C )
J
C
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
6.0
2000
I
D
TOP
33A
53A
5.0
4.0
3.0
2.0
1.0
0.0
1500
1000
500
0
BOTTOM 195A
10
20
V
30
40
50
60
70
80
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Drain-to-Source Voltage (V)
DS,
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
Fig 11. Typical COSS Stored Energy
4
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