IRFP4368PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
≤
Tj = 175°C
≤
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
I
= 195A
= 10V
V
= 25V
D
DS
60µs PULSE WIDTH
V
≤
GS
T
= 175°C
J
T
= 25°C
J
1.0
1
2
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
1E+006
100000
10000
1000
12.0
V
C
= 0V,
f = 1 MHZ
GS
I = 195A
D
= C + C , C SHORTED
iss
gs gd ds
C
= C
10.0
rss
gd
V
V
= 60V
= 38V
DS
DS
C
= C + C
oss
ds
gd
8.0
6.0
4.0
2.0
0.0
C
C
iss
oss
C
rss
100
1
10
, Drain-to-Source Voltage (V)
100
0
50 100 150 200 250 300 350 400
, Total Gate Charge (nC)
V
Q
DS
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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INFINEON [ Infineon ]
