IRF640N/S/L
2500
20
16
12
8
V
C
= 0V, f = 1 MHZ
I
D
=
11A
GS
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
= C + C , C
SHORTED
iss
gs gd ds
C
= C
gd
rss
2000
1500
1000
500
0
C
= C + C
oss
ds gd
Ciss
Coss
Crss
4
0
0
20
40
60
80
1
10
100
1000
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
10us
100us
°
T = 25 C
J
1ms
10ms
1
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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