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IRAUDAMP1 参数 Datasheet PDF下载

IRAUDAMP1图片预览
型号: IRAUDAMP1
PDF下载: 下载PDF文件 查看货源
内容描述: 高功率D类音频功率放大器采用IR2011S [High Power Class D Audio Power Amplifier using IR2011S]
分类和应用: 放大器功率放大器
文件页数/大小: 22 页 / 3218 K
品牌: INFINEON [ Infineon ]
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Functional Description  
Feed back  
+
V
C
C
Integrator  
LT1220  
Level Shifter  
2N5401  
IR2011S  
Gate  
++  
LPF  
Driver  
GND  
Comparator  
74HC04  
IRFB23N15  
D
-V  
C
C
-VCC  
Fig. 3 Simplified Block Diagram of Amplifier  
Self Oscillating PWM modulator  
The IRAUDAMP1 class D audio power amplifier is based on a self oscillating type  
PWM modulator for the lowest component count and a robust design. This topology is  
basically an analog version of a 2nd order sigma delta modulation having a class D  
switching stage inside the loop. The benefit of the sigma delta modulation in comparison  
to the carrier signal based modulator is that all the error in the audible frequency range is  
shifted away into the inaudible upper frequency range by nature of its operation, and it  
can apply a sufficient amount of correction. Another important benefit of the self-  
oscillating modulator is that it will cease operation if something interrupts the oscillating  
sequences. This is generally beneficial in a class D application because it makes the  
amplifier more robust.  
Looking at CH-1 as an example, OP amp U1 forms a front end 2nd order integrator with C17 &  
C18. This integrator receives a rectangular waveform from the class D switching stage and  
outputs a quadratic oscillatory waveform as a carrier signal. To create the modulated PWM, the  
input signal shifts the average value of this quadratic waveform, through R10, so that the duty  
varies according to the instantaneous value of the analog input signal. The level shift transistor  
Q1 converts the carrier signal from a voltage form into a current form and sends it to the logic  
gates sitting on the negative DC bus via the level shift resistor R44, which conerts the signal back  
into a voltage form. The signal is then quantized by the threshold of the CMOS inverter gate U2.  
The PWM signal out of the inverter is split into two signals, with opposite polarity, one for high  
side MOSFET drive signal, the other for the low side MOSFET drive signal. The dual AND gates  
of U4 are used to implement the shutdown function, a high shutdown signal will ensure the  
outputs of the AND gates are low which in turn ensures the inputs to the gate driver are low.  
www.irf.com  
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