Specifications
±Vcc=±50V, RL = 4Ω unless otherwise noted.
Output Stage
Half Bridge
Topology
Modulator
Self Oscillating, 2nd order
Sigma-Delta Modulation,
Analog Input
IR Devices Used
IR2011S Gate Driver
IRFB23N15D MOSFET
400kHz (Adjustable)
250W + 250W
Switching Frequency
Rated Output Power
No signal
1kHz, THD=1.0%
1kHz, THD=10%
350W + 350W
370W + 370W (Peak Power) 1kHz, THD=1.0%, ±60V
500W + 500W (Peak Power) 1kHz, THD=10%, ±60V
THD+N
Efficiency
S/N
0.008%
1kHz, 100W,
AES-17 LPF
1kHz, 350W,
Class D stage
IHF-A Weighted,
BW=20kHz
93%
115dB
Damping Factor
200
8Ω, 1KHz
Frequency Response
Channel Separation
3Hz ~ 40kHz (-3dB)
100dB
80dB
4Ω
100Hz
10kHz
Minimum Load
Impedance
Power Supply
±50V, (operational ±25V ~
±60V)
Quiescent Current
Dimensions
+75mA, -125mA
4.0”(W) x 5.5”(D) x 1.5”(H)
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INFINEON [ Infineon ]
