IRAM256-1067A
Absolute Maximum Ratings
Symbol
Description
Min
---
Max
600
450
10
Unit
VCES / VRRM
IGBT/ FW Diode Blocking Voltage
Positive Bus Input Voltage
V
V+
---
IO @ TC=25°C
RMS Phase Current (Note 1)
---
IO @ TC=100°C
RMS Phase Current (Note 1)
---
5
A
IPK
Maximum Peak Phase Current (Note 2)
Maximum PWM Carrier Frequency
Maximum Power dissipation per IGBT @ TC =25°C
Isolation Voltage (1min)
---
15
FP
---
20
kHz
W
PD
---
28
VISO
---
2000
150
125
125
1.0
VRMS
TJ (IGBT/Diode/IC)
Operating Junction Temperature
Operating Case Temperature Range
Storage Temperature Range
-40
-40
-40
0.8
---
TC
°C
TSTG
T
Mounting torque Range (M3 screw)
Bootstrap Diode Peak Forward Current
Bootstrap Resistor Peak Power (Single Pulse)
High side floating supply offset voltage
High side floating supply voltage
Nm
A
IBDF
1.0
PBR_Peak
VS1,2,3
VB1,2,3
VCC
---
15
W
V
VB1,2,3 - 20
-0.3
-0.3
-0.3
VB1,2,3 +0.3
600
20
V
Low Side and logic fixed supply voltage
Input voltage LIN, HIN, ITRIP, FLT/EN
V
VIN
7
V
Note 1: See Figure 4 and IR IPM Design Tool.
Note 2: tP<100ms.
Inverter Section Electrical Characteristics
VBIAS(VCC, VBS1,2,3)=15V, TJ=25°C unless otherwise specified.
Symbol
Description
Min
Typ
Max
Unit
Conditions
Collector-to-Emitter Breakdown
Voltage
V(BE)CES
600
---
---
V
VIN=0V, IC=100μA
Temperature Coeff. Of
Breakdown Voltage
VIN=0V, IC=250A
(25°C - 150°C)
ΔV(BR)CES / ΔT
---
0.3
---
V/°C
V
---
---
---
---
---
---
---
---
---
---
---
---
---
1.5
1.7
5
1.75
---
IC=4A
Collector-to-Emitter Saturation
Voltage
VCE(ON)
IC=4A, TJ=150°C
VIN=0V, V+=600V
VIN=0V, V+=600V, TJ=150°C
80
---
Zero Gate Voltage Collector
Current
ICES
μA
V
80
1.6
1.3
1.65
1.3
22
2.35
---
IF=4A
VFM
Diode Forward Voltage Drop
IF=4A, TJ=150°C
IF=1A
1.8
---
Bootstrap Diode Forward
Voltage Drop
VBDFM
V
IF=1A, TJ=150°C
RBR
Bootstrap Resistor Value
Bootstrap Resistor Tolerance
VCC / VBS Capacitor Value
ITRIP Capacitor Value
---
Ω
ΔRBR/RBR
C1,2,3,4
C6
---
±5
---
%
47
nF
nF
nF
1
---
C7
NTC Capacitor Value
2.2
---
3
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May 14, 2014
INFINEON [ Infineon ]
