£
Intel Advanced+ Boot Block Flash Memory (C3)
8.4
Reset Specifications
Table 22. Reset Specifications
V
2.7 V – 3.6 V
Max
CC
Symbol
Parameter
Notes
Unit
Min
RP# Low to Reset during Read
(If RP# is tied to VCC, this specification is not
applicable)
tPLPH
1, 2
100
ns
tPLRH1
RP# Low to Reset during Block Erase
RP# Low to Reset during Program
3
3
22
12
µs
µs
tPLRH2
NOTES:
1. If tPLPH is < 100 ns the device may still reset but this is not guaranteed.
2. If RP# is asserted while a Block Erase or Word Program operation is not executing, the reset will complete
within 100 ns.
3. Sampled, but not 100% tested.
Figure 10. Reset Operations Waveforms
V
IH
RP# (P)
tPHQV
tPHWL
tPHEL
VIL
t PLPH
(A) Reset during Read Mode
Abort
Complete
t PLRH
tPHQV
tPHWL
tPHEL
VIH
VIL
RP# (P)
t PLPH
t PLPH
t PLRH
<
(B) Reset during Program or Block Erase,
Abort Deep
Complete Power-
tPHQV
tPHWL
tPHEL
Down
t PLRH
VIH
VIL
RP# (P)
t PLPH
(C) Reset Program or Block Erase,
>
t PLPH t PLRH
48
Datasheet
INTEL [ INTEL ]
