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TE28F128J3C-150 参数 Datasheet PDF下载

TE28F128J3C-150图片预览
型号: TE28F128J3C-150
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔StrataFlash闪存( J3 ) [Intel StrataFlash Memory (J3)]
分类和应用: 闪存
文件页数/大小: 72 页 / 909 K
品牌: INTEL [ INTEL ]
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256-Mbit J3 (x8/x16)  
Table 31. Protection Register Information  
Offset(1)  
P = 31h  
Description  
(Optional Flash Features and Commands)  
Hex  
Code  
Length  
Add.  
Value  
Number of Protection register fields in JEDEC ID space.  
“00h,” indicates that 256 protection bytes are available  
(P+E)h  
1
4
3F:  
--01  
01  
Protection Field 1: Protection Description  
This field describes user-available One Time Programmable  
(OTP) Protection Register bytes. Some are pre-programmed  
with device-unique serial numbers. Others are user-  
programmable. Bits 0-15 point to the Protection Register lock  
byte, the section’s first byte. The following bytes are factory  
pre-programmed and user-programmable.  
40:  
41:  
42:  
43:  
--80  
--00  
--03  
--03  
80h  
00h  
(P+F)h  
(P+10)h  
(P+11)h  
(P+12)h  
8bytes  
8bytes  
bits 0-7 = Lock/bytes JEDEC-plane physical low address  
bits 8-15 = Lock/bytes JEDEC-plane physical high address  
bits 16-23 = “n” such that 2n = factory pre-programmed bytes  
bits 24-31 = “n” such that 2n = user-programmable bytes  
NOTE:  
1. The variable P is a pointer which is defined at CFI offset 15h.  
Table 32. Burst Read Information  
Offset(1)  
P = 31h  
Description  
(Optional Flash Features and Commands)  
Hex  
Code  
Length  
Add.  
Value  
Page Mode Read capability  
bits 0–7 = “n” such that 2n HEX value represents the number  
of read-page bytes. See offset 28h for device word width to  
determine page-mode data output width. 00h indicates no  
read page buffer.  
(P+13)h  
1
1
44:  
--03  
--00  
8 byte  
0
Number of synchronous mode read configuration fields that  
follow. 00h indicates no burst capability.  
(P+14)h  
45:  
46:  
(P+15)h  
Reserved for future use  
NOTE:  
1. The variable P is a pointer which is defined at CFI offset 15h.  
58  
Datasheet  
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