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TE28F128J3C-150 参数 Datasheet PDF下载

TE28F128J3C-150图片预览
型号: TE28F128J3C-150
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔StrataFlash闪存( J3 ) [Intel StrataFlash Memory (J3)]
分类和应用: 闪存
文件页数/大小: 72 页 / 909 K
品牌: INTEL [ INTEL ]
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256-Mbit J3 (x8/x16)  
Table 27. CFI Identification (Sheet 2 of 2)  
Hex  
Code  
Offset Length  
Description  
Add.  
Value  
0000h means no second vendor-specified algorithm exists  
Secondary algorithm Extended Query Table address.  
0000h means none exists  
18:  
19:  
1A:  
--00  
--00  
--00  
19h  
2
A.5  
System Interface Information  
The following device information can optimize system interface software.  
Table 28. System Interface Information  
Hex  
Code  
Offset Length  
Description  
Add.  
Value  
V
V
V
V
logic supply minimum program/erase voltage  
bits 0–3 BCD 100 mV  
bits 4–7 BCD volts  
CC  
1Bh  
1Ch  
1Dh  
1Eh  
1
1
1
1
1B:  
--27  
--36  
--00  
--00  
2.7 V  
logic supply maximum program/erase voltage  
bits 0–3 BCD 100 mV  
bits 4–7 BCD volts  
CC  
1C:  
1D:  
1E:  
3.6 V  
0.0 V  
0.0 V  
[programming] supply minimum program/erase voltage  
bits 0–3 BCD 100 mV  
bits 4–7 HEX volts  
PP  
[programming] supply maximum program/erase voltage  
bits 0–3 BCD 100 mV  
bits 4–7 HEX volts  
PP  
1Fh  
20h  
21h  
22h  
1
1
1
1
“n” such that typical single word program time-out = 2n µs  
“n” such that typical max. buffer write time-out = 2n µs  
“n” such that typical block erase time-out = 2n ms  
“n” such that typical full chip erase time-out = 2n ms  
“n” such that maximum word program time-out = 2n times  
typical  
1F:  
20:  
21:  
22:  
--08  
--08  
--0A  
--00  
256 µs  
256 µs  
1 s  
NA  
23h  
1
23:  
--04  
2 ms  
24h  
25h  
26h  
1
1
1
“n” such that maximum buffer write time-out = 2n times typical  
“n” such that maximum block erase time-out = 2n times typical  
“n” such that maximum chip erase time-out = 2n times typical  
24:  
25:  
26:  
--04  
--04  
--00  
2 ms  
16 s  
NA  
A.6  
Device Geometry Definition  
This field provides critical details of the flash device geometry.  
Table 29. Device Geometry Definition (Sheet 1 of 2)  
Code See Table  
Below  
Offset Length  
Description  
27h  
28h  
1
2
“n” such that device size = 2n in number of bytes  
27:  
x8/  
x16  
Flash device interface: x8 async x16 async x8/x16 async  
28:  
--02  
28:00,29:00 28:01,29:00 28:02,29:00  
“n” such that maximum number of bytes in write buffer = 2n  
29:  
2A:  
2B:  
--00  
--05  
--00  
2Ah  
2
32  
Datasheet  
55  
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