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RD28F1602C3B110 参数 Datasheet PDF下载

RD28F1602C3B110图片预览
型号: RD28F1602C3B110
PDF下载: 下载PDF文件 查看货源
内容描述: 3 VOLT英特尔?高级+引导?座闪存?记忆? ( C3) ?堆叠芯片? ScalPackage ? Familye [3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye]
分类和应用: 闪存存储内存集成电路静态存储器
文件页数/大小: 70 页 / 1167 K
品牌: INTEL [ INTEL ]
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3 Volt Intel® Advanced+ Boot Block Flash Memory Stacked-CSP Family  
5.8  
Flash Reset Operations  
Figure 8. AC Waveform: Reset Operation  
V
IH  
RP# (P)  
tPHQV  
tPHWL  
tPHEL  
VIL  
t PLPH  
(A) Reset during Read Mode  
Abort  
Complete  
t PLRH  
tPHQV  
tPHWL  
tPHEL  
VIH  
VIL  
RP# (P)  
t PLPH  
t PLPH  
t PLRH  
<
(B) Reset during Program or Block Erase,  
Abort Deep  
Complete Power-  
tPHQV  
tPHWL  
tPHEL  
Down  
t PLRH  
VIH  
VIL  
RP# (P)  
t PLPH  
(C) Reset Program or Block Erase,  
>
t PLPH t PLRH  
Table 16. Reset Specifications(1)  
F-V 2.7 V – 3.3 V  
CC  
Symbol  
Parameter  
Note  
Unit  
Min  
Max  
F-RP# Low to Reset during Read (If F-RP# is tied  
t
2,4  
100  
ns  
PLPH  
to V , this specification is not applicable)  
CC  
t
t
F-RP# Low to Reset during Block Erase  
F-RP# Low to Reset during Program  
3,4  
3,4  
22  
12  
µs  
µs  
PLRH1  
PLRH2  
NOTES:  
1. See Section 2.1.4, “Flash Reset” on page 13 for a full description of these conditions.  
2. If t is < 100 ns the device may still reset but this is not guaranteed.  
PLPH  
3. If F-RP# is asserted while a block erase or word program operation is not executing, the reset will complete  
within 100 ns.  
4. Sampled, but not 100% tested.  
34  
Datasheet  
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