BYTE-WIDE SmartVoltage FlashFile™ MEMORY FAMILY
E
Table 3. Pin Descriptions (Continued)
Sym
WE#
Type
Name and Function
INPUT WRITE ENABLE: Controls writes to the CUI and array blocks. Addresses and data
are latched on the rising edge of the WE# pulse.
RY/BY#
OUTPUT READY/BUSY#: Indicates the status of the internal WSM. When low, the WSM is
performing an internal operation (block erase, program, or lock-bit configuration).
RY/BY#-high indicates that the WSM is ready for new commands, block erase or
program is suspended, or the device is in deep power-down mode. RY/BY# is
always active.
VPP
SUPPLY BLOCK ERASE, PROGRAM, LOCK-BIT CONFIGURATION POWER SUPPLY:
For erasing array blocks, programming data, or configuring lock-bits.
SmartVoltage Flash → 3.3 V, 5 V, and 12 V VPP
With VPP ≤ VPPLK, memory contents cannot be altered. Block erase, program, and
lock-bit configuration with an invalid VPP (see DC Characteristics) produce spurious
results and should not be attempted.
VCC
SUPPLY DEVICE POWER SUPPLY: Internal detection automatically configures the device
for optimized read performance. Do not float any power pins.
SmartVoltage Flash → 2.7 V (Read-Only), 3.3 V, and 5 V VCC
With VCC ≤ VLKO, all write attempts to the flash memory are inhibited. Device
operations at invalid VCC voltages (see DC Characteristics) produce spurious
results and should not be attempted. Block erase, program, and lock-bit
configuration operations with VCC < 3.0 V are not supported.
GND
NC
SUPPLY GROUND: Do not float any ground pins.
NO CONNECT: Lead is not internally connected; it may be driven or floated.
8
PRELIMINARY
INTEL [ INTEL ]
