E
BYTE-WIDE SmartVoltage FlashFile™ MEMORY FAMILY
(3, 4, 5)
—
6.7
Block Erase, Program, and Lock-Bit Configuration Performance
Commercial Temperature
VCC = 3.3 V ± 0.3 V, TA = 0°C to +70°C
3.3 V VPP
5 V VPP
12 V VPP
(1)
(1)
(1)
#
Sym
Parameter
Notes Typ
Max
Typ
Max
Typ
Max Unit
W16 tWHRH1
,
Program Time
2
19
300
10
150
7
125
µs
tEHRH1
Block Write Time
Block Erase Time
2
2
1.2
0.8
4
6
0.7
0.4
2
5
0.5
0.3
1.5
4
sec
sec
W16 tWHRH2
,
,
,
tEHRH2
W16 tWHRH3
tEHRH3
Set Lock-Bit Time
Clear Block Lock-
2
2
21
1.8
7.1
TBD
TBD
10
13.3
1.2
TBD
TBD
9.3
11.6
1.1
TBD
TBD
10.4
µs
sec
µs
W16 tWHRH4
tEHRH4 Bits Time
W16 tWHRH5
,
Program Suspend
6.6
7.4
tEHRH5 Latency Time to
Read
W16 tWHRH6
,
Erase Suspend
15.2
21.1
12.3
17.2
12.3
17.2
µs
tEHRH6 Latency Time to
Read
V
CC = 5 V ± 5%, 5 V ± 10%, TA = 0°C to +70°C
5 V VPP
12 V VPP
(1)
(1)
#
Sym
Parameter
Program Time
Notes
Typ Max
Typ Max Unit
W16 tWHRH1
,
2
8
150
6
100 µs
tEHRH1
Block Write Time
Block Erase Time
2
2
0.5
0.4
1.5
5
0.4
0.3
1
4
sec
sec
W16 tWHRH2
,
,
,
,
,
tEHRH2
W16 tWHRH3
tEHRH3
Set Lock-Bit Time
2
2
12 TBD
1.1 TBD
10 TBD µs
1.0 TBD sec
5.2 7.5 µs
9.8 12.6 µs
W16 tWHRH4
tEHRH4
Clear Block Lock-Bits Time
W16 tWHRH5
tEHRH5
Program Suspend Latency Time to
Read
5.6
7
W16 tWHRH6
tEHRH6
Erase Suspend Latency Time to
Read
9.4 13.1
NOTES:
1. Typical values measured at TA = +25°C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
2. Excludes system-level overhead.
3. These performance numbers are valid for all speed versions.
4. Sampled, but not 100% tested.
5. Reference the AC Waveform for Write Operations, Figure 19.
39
PRELIMINARY
INTEL [ INTEL ]
