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JS28F128P30T85 参数 Datasheet PDF下载

JS28F128P30T85图片预览
型号: JS28F128P30T85
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔的StrataFlash嵌入式存储器 [Intel StrataFlash Embedded Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 102 页 / 1616 K
品牌: INTEL [ INTEL ]
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1-Gbit P30 Family  
C.3  
CFI Query Identification String  
The Identification String provides verification that the component supports the Common Flash  
Interface specification. It also indicates the specification version and supported vendor-specified  
command set(s).  
Table 34.  
CFI Identification  
Hex  
Offset Length  
Description  
Query-unique ASCII string “QRY“  
Code  
--51  
--52  
--59  
--01  
--00  
--0A  
--01  
--00  
--00  
--00  
--00  
Add.  
10:  
11:  
12:  
13:  
14:  
15:  
16:  
17:  
18:  
19:  
1A:  
Value  
"Q"  
"R"  
3
10h  
"Y"  
2
2
2
2
Primary vendor command set and control interface ID code.  
16-bit ID code for vendor-specified algorithms  
Extended Query Table primary algorithm address  
13h  
15h  
17h  
19h  
Alternate vendor command set and control interface ID code.  
0000h means no second vendor-specified algorithm exists  
Secondary algorithm Extended Query Table address.  
0000h means none exists  
Table 35.  
System Interface Information  
Hex  
Offset  
Length  
Description  
Add. Code Value  
1Bh  
1
V
CC logic supply minimum program/erase voltage  
bits 0–3 BCD 100 mV  
bits 4–7 BCD volts  
1B:  
1C:  
1D:  
1E:  
--17  
--20  
--85  
--95  
1.7V  
2.0V  
8.5V  
9.5V  
1Ch  
1Dh  
1Eh  
1
1
1
VCC logic supply maximum program/erase voltage  
bits 0–3 BCD 100 mV  
bits 4–7 BCD volts  
PP [programming] supply minimum program/erase voltage  
V
bits 0–3 BCD 100 mV  
bits 4–7 HEX volts  
VPP [programming] supply maximum program/erase voltage  
bits 0–3 BCD 100 mV  
bits 4–7 HEX volts  
“n” such that typical single word program time-out = 2n µ-sec  
“n” such that typical max. buffer write time-out = 2n µ-sec  
“n” such that typical block erase time-out = 2n m-sec  
“n” such that typical full chip erase time-out = 2n m-sec  
“n” such that maximum word program time-out = 2n times typical  
“n” such that maximum buffer write time-out = 2n times typical  
“n” such that maximum block erase time-out = 2n times typical  
“n” such that maximum chip erase time-out = 2n times typical  
1Fh  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
1
1
1
1
1
1
1
1
1F:  
20:  
21:  
22:  
23:  
24:  
25:  
26:  
--08 256µs  
--09 512µs  
--0A  
--00  
1s  
NA  
--01 512µs  
--01 1024µs  
--02  
--00  
4s  
NA  
Datasheet  
Intel StrataFlash® Embedded Memory (P30)  
Order Number: 306666, Revision: 001  
April 2005  
95  
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