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JS28F128P30T85 参数 Datasheet PDF下载

JS28F128P30T85图片预览
型号: JS28F128P30T85
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔的StrataFlash嵌入式存储器 [Intel StrataFlash Embedded Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 102 页 / 1616 K
品牌: INTEL [ INTEL ]
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1-Gbit P30 Family  
Table 38.  
Protection Register Information  
Offset(1)  
Hex  
Length  
Description  
P = 10Ah  
(Optional flash features and commands)  
Add. Code Value  
(P+E)h  
1
4
Number of Protection register fields in JEDEC ID space.  
“00h,” indicates that 256 protection fields are available  
Protection Field 1: Protection Description  
This field describes user-available One Time Programmable  
(OTP) Protection register bytes. Some are pre-programmed  
with device-unique serial numbers. Others are user  
programmable. Bits 0–15 point to the Protection register Lock  
byte, the section’s first byte. The following bytes are factory  
pre-programmed and user-programmable.  
118: --02  
2
(P+F)h  
(P+10)h  
(P+11)h  
(P+12)h  
119: --80  
11A: --00  
11B: --03 8 byte  
11C: --03 8 byte  
80h  
00h  
bits 0–7 = Lock/bytes Jedec-plane physical low address  
bits 8–15 = Lock/bytes Jedec-plane physical high address  
bits 16–23 = “n” such that 2n = factory pre-programmed bytes  
bits 24–31 = “n” such that 2n = user programmable bytes  
(P+13)h  
(P+14)h  
(P+15)h  
(P+16)h  
(P+17)h  
(P+18)h  
(P+19)h  
(P+1A)h  
(P+1B)h  
(P+1C)h  
10  
Protection Field 2: Protection Description  
Bits 0–31 point to the Protection register physical Lock-word  
address in the Jedec-plane.  
11D: --89  
11E: --00  
11F: --00  
120: --00  
89h  
00h  
00h  
00h  
0
0
0
16  
0
16  
Following bytes are factory or user-programmable.  
bits 32–39 = “n” n = factory pgm'd groups (low byte)  
--00  
--00  
--00  
121:  
122:  
123:  
bits 40–47 = “n” n = factory pgm'd groups (high byte)  
bits 48–55 = “n” \ 2n = factory programmable bytes/group  
bits 56–63 = “n” n = user pgm'd groups (low byte)  
124: --10  
--00  
125:  
126:  
bits 64–71 = “n” n = user pgm'd groups (high byte)  
n
bits 72–79 = “n” 2 = user programmable bytes/group  
--04  
Table 39.  
Burst Read Information  
Offset(1)  
Hex  
Length  
Description  
P = 10Ah  
(Optional flash features and commands)  
Add. Code Value  
(P+1D)h  
1
Page Mode Read capability  
127: --03 8 byte  
bits 0–7 = “n” such that 2n HEX value represents the number of  
read-page bytes. See offset 28h for device word width to  
determine page-mode data output width. 00h indicates no  
read page buffer.  
Number of synchronous mode read configuration fields that  
follow. 00h indicates no burst capability.  
Synchronous mode read capability configuration 1  
Bits 3–7 = Reserved  
(P+1E)h  
(P+1F)h  
1
1
128: --04  
129: --01  
4
4
bits 0–2 “n” such that 2n+1 HEX value represents the  
maximum number of continuous synchronous reads when  
the device is configured for its maximum word width. A value  
of 07h indicates that the device is capable of continuous  
linear bursts that will output data until the internal burst  
counter reaches the end of the device’s burstable address  
space. This field’s 3-bit value can be written directly to the  
Read Configuration Register bits 0–2 if the device is  
configured for its maximum word width. See offset 28h for  
word width to determine the burst data output width.  
Synchronous mode read capability configuration 2  
Synchronous mode read capability configuration 3  
Synchronous mode read capability configuration 4  
(P+20)h  
(P+21)h  
(P+22)h  
1
1
1
12A: --02  
12B: --03  
12C: --07  
8
16  
Cont  
April 2005  
98  
Intel StrataFlash® Embedded Memory (P30)  
Order Number: 306666, Revision: 001  
Datasheet  
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