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JS28F128P30T85 参数 Datasheet PDF下载

JS28F128P30T85图片预览
型号: JS28F128P30T85
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔的StrataFlash嵌入式存储器 [Intel StrataFlash Embedded Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 102 页 / 1616 K
品牌: INTEL [ INTEL ]
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1-Gbit P30 Family  
To read data from the device (other than an erase-suspended block), the Read Array command must  
be issued. During Erase Suspend, a Program command can be issued to any block other than the  
erase-suspended block. Block erase cannot resume until program operations initiated during erase  
suspend complete. Read Array, Read Status Register, Read Device Identifier, CFI Query, and Erase  
Resume are valid commands during Erase Suspend. Additionally, Clear Status Register, Program,  
Program Suspend, Block Lock, Block Unlock, and Block Lock-Down are valid commands during  
Erase Suspend.  
During an erase suspend, deasserting CE# places the device in standby, reducing active current.  
VPP must remain at a valid level, and WP# must remain unchanged while in erase suspend. If  
RST# is asserted, the device is reset.  
12.3  
12.4  
Erase Resume  
The Erase Resume command instructs the device to continue erasing, and automatically clears  
status register bits SR[7,6]. This command can be written to any address. If status register error bits  
are set, the Status Register should be cleared before issuing the next instruction. RST# must remain  
deasserted (see Figure 41, “Program Suspend/Resume Flowchart” on page 86).  
Erase Protection  
When VPP = VIL, absolute hardware erase protection is provided for all device blocks. If VPP is  
below VPPLK, erase operations halt and SR[3] is set indicating a VPP-level error.  
April 2005  
68  
Intel StrataFlash® Embedded Memory (P30)  
Order Number: 306666, Revision: 001  
Datasheet  
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