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DT28F320J5-120 参数 Datasheet PDF下载

DT28F320J5-120图片预览
型号: DT28F320J5-120
PDF下载: 下载PDF文件 查看货源
内容描述: 5伏英特尔的StrataFlash ?内存 [5 Volt Intel StrataFlash® Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 51 页 / 620 K
品牌: INTEL [ INTEL ]
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28F320J5 and 28F640J5  
3.7  
Write  
Writing commands to the CUI enables reading of device data, query, identifier codes, inspection  
and clearing of the status register, and, when VPEN = VPENH, block erasure, program, and lock-bit  
configuration.  
The Block Erase command requires appropriate command data and an address within the block to  
be erased. The Byte/Word Program command requires the command and address of the location to  
be written. Set Master and Block Lock-Bit commands require the command and address within the  
device (Master Lock) or block within the device (Block Lock) to be locked. The Clear Block Lock-  
Bits command requires the command and address within the device.  
The CUI does not occupy an addressable memory location. It is written when the device is enabled  
and WE# is active. The address and data needed to execute a command are latched on the rising  
edge of WE# or the first edge of CE0, CE1, or CE2 that disables the device (see Table 2 on  
page 12). Standard microprocessor write timings are used.  
Table 3. Bus Operations  
STS  
(default  
mode)  
(1)  
Mode  
Notes  
RP#  
CE  
OE#(2) WE#(2) Address  
V
DQ(3)  
0,1,2  
PEN  
Read Array  
Output Disable  
Standby  
4,5,6  
V
V
V
or V  
or V  
or V  
Enabled  
Enabled  
Disabled  
V
V
V
X
X
X
X
X
X
D
High Z(7)  
IH  
IH  
IH  
HH  
HH  
HH  
IL  
IH  
OUT  
V
Hig  
h Z  
X
IH  
IH  
X
X
High Z  
X
Reset/Power-  
Down Mode  
(7)  
V
X
X
X
X
X
X
X
X
Hig h Z  
Note 8  
Note 9  
Hig h Z  
IL  
Read Identifier  
Codes  
See  
Figure 5  
(7)  
V
V
V
or V  
or V  
or V  
Enabled  
Enabled  
Enabled  
V
V
Hig h Z  
IH  
IH  
IH  
HH  
HH  
HH  
IL  
IL  
IL  
IH  
IH  
IH  
See  
Table 7  
(7)  
Read Query  
V
V
V
V
Hig h Z  
Read Status  
(WSM off)  
X
D
OUT  
DQ = D  
7
OUT  
Read Status  
(WSM on)  
V
V
or V  
or V  
Enabled  
Enabled  
V
V
X
X
V
DQ  
DQ  
= Hig h Z  
= Hig h Z  
IH  
IH  
HH  
HH  
IL  
IH  
PENH  
15–8  
6–0  
Write  
6,10,11  
V
V
X
D
IN  
X
IH  
IL  
NOTES:  
1. See Table 2 for valid CE configurations.  
2. OE# and WE# should never be enabled simultaneously.  
3. DQ refers to DQ –DQ if BYTE# is low and DQ –DQ if BYTE# is high.  
0
7
0
15  
4. Refer to DC Characteristics. When V  
V  
, memory contents can be read, but not altered.  
PEN  
PENLK  
5. X can be V or V for control and address pins, and V  
or V  
for V  
. See DC Characteristics for  
IL  
and V  
IH  
PENLK  
PENH  
PEN  
V
voltages.  
PENLK  
PENH  
6. In default mode, STS is V when the WSM is executinginternal block erase, program, or lock-bit  
OL  
configuration algorithms. It is V when the WSM is not busy, in block erase suspend mode (with  
programming inactive), or reset/power-down mode.  
OH  
7. High Z will be V with an external pull-up resistor.  
OH  
8. See Read Identifier Codes Command section for read identifier code data.  
9. See Read Query Mode Command section for read query data.  
10.Command writes involving block erase, program, or lock-bit configuration are reliably executed when V  
=
PEN  
V
and V is within specification. Block erase, program, or lock-bit configuration with V < RP# < V  
PENH  
CC IH HH  
produce spurious results and should not be attempted.  
11.Refer to Table 4 for valid D duringa write operation.  
IN  
16  
Datasheet