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82915GV 参数 Datasheet PDF下载

82915GV图片预览
型号: 82915GV
PDF下载: 下载PDF文件 查看货源
内容描述: Express芯片组 [Express Chipset]
分类和应用:
文件页数/大小: 426 页 / 3241 K
品牌: INTEL [ INTEL ]
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Signal Description  
R
Signal Name  
Type  
Description  
SCKE_A[3:0]  
O
SSTL-  
2/1.8  
Clock Enable: (1 per Rank) SACKE is used to initialize the SDRAMs  
during power-up, to power-down SDRAM ranks, and to place all SDRAM  
ranks into and out of self-refresh during Suspend-to-RAM.  
SODT_A[3:0]  
O
On Die Termination (DDR2 only): Active On-die Termination Control  
SSTL-1.8  
signals for DDR2 devices.  
2.3  
DDR/DDR2 DRAM Channel B Interface  
Note that the 82910GL, 82915GL, and 82915PL (G)MCH only supports DDR DRAM.  
Signal Name  
Type  
Description  
SCLK_B[5:0]  
O
SSTL-  
2/1.8  
SDRAM Differential Clock: (3 per DIMM) SCLK_Bx and its complement  
SCLK_Bx# signal make a differential clock pair output. The crossing of  
the positive edge of SCLK_Bx and the negative edge of its complement  
SCLK_Bx# are used to sample the command and control signals on the  
SDRAM.  
SCLK_B[5:0]#  
SCS_B[3:0]#  
SMA_B[13:0]  
SBS_B[2:0]  
O
SSTL-  
2/1.8  
SDRAM Complementary Differential Clock: (3 per DIMM) These are  
the complementary differential DDR/DDR2 clock signals.  
O
SSTL-  
2/1.8  
Chip Select: (1 per Rank) These signals select particular SDRAM  
components during the active state. There is one chip select for each  
SDRAM rank  
O
SSTL-  
2/1.8  
Memory Address: These signals are used to provide the multiplexed  
row and column address to the SDRAM  
O
Bank Select: These signals define which banks are selected within  
SSTL-  
2/1.8  
each SDRAM rank  
DDR2: 1-Gb technology is 8 banks.  
DDR: 1-Gb technology is 4 banks. SBS_B[2] is not used  
SRAS_B#  
SCAS_B#  
SWE_B#  
O
SSTL-  
2/1.8  
Row Address Strobe: This signal is used with SCAS_B# and SWE_B#  
(along with SCS_B#) to define the SDRAM commands  
O
SSTL-  
2/1.8  
Column Address Strobe: This signal is used with SRAS_B# and  
SWE_B# (along with SCS_B#) to define the SDRAM commands.  
O
Write Enable: This signal is used with SCAS_B# and SRAS_B# (along  
SSTL-  
2/1.8  
with SCS_B#) to define the SDRAM commands.  
SDQ_B[63:0]  
I/O  
SSTL-  
2/1.8  
2x  
Data Lines: SDQ_Bx signals interface to the SDRAM data bus  
SDM_B[7:0]  
O
SSTL-  
2/1.8  
2x  
Data Mask: When activated during writes, the corresponding data  
groups in the SDRAM are masked. There is one SDM_Bx signal for  
every data byte lane.  
Datasheet  
39