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370 参数 Datasheet PDF下载

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型号: 370
PDF下载: 下载PDF文件 查看货源
内容描述: 90纳米制程的赛扬M处理器 [Celeron M Processor on 90 nm Process]
分类和应用:
文件页数/大小: 68 页 / 864 K
品牌: INTEL [ INTEL ]
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Electrical Specifications  
Table 9.  
Symbol  
AGTL+ Signal Group DC Specifications  
Parameter  
I/O Voltage  
Min  
Typ  
Max  
Unit Notes1  
VCCP  
GTLREF  
VIH  
0.997  
2/3 VCCP - 2%  
GTLREF + 0.1  
-0.1  
1.05  
1.102  
V
Reference Voltage  
Input High Voltage  
Input Low Voltage  
Output High Voltage  
Termination Resistance  
Buffer On Resistance  
Input Leakage Current  
Pad Capacitance  
2/3 VCCP  
2/3 VCCP + 2%  
VCCP + 0.1  
V
V
V
6
3,6  
2,4  
6
VIL  
GTLREF - 0.1  
VOH  
RTT  
VCCP  
55  
47  
63  
Ω
Ω
7
RON  
ILI  
17.7  
24.7  
32.9  
±100  
2.75  
5
µA  
pF  
8
Cpad  
1.8  
2.3  
9
NOTES:  
1.  
2.  
Unless otherwise noted, all specifications in this table apply to all processor frequencies.  
IL is defined as the maximum voltage level at a receiving agent that will be interpreted as a logical low  
value.  
IH is defined as the minimum voltage level at a receiving agent that will be interpreted as a logical high  
value.  
IH and VOH may experience excursions above VCCP. However, input signal drivers must comply with the  
V
3.  
4.  
5.  
6.  
7.  
V
V
signal quality specifications in Chapter 3.  
This is the pull-down driver resistance. Refer to processor I/O buffer models for I/V characteristics.  
Measured at 0.31*VCCP. RON (min) = 0.38*RTT, RON (typ) = 0.45*RTT, RON (max) = 0.52*RTT.  
GTLREF should be generated from VCCP with a 1% tolerance resistor divider. The VCCP referred to in these  
specifications is the instantaneous VCCP  
.
RTT is the on-die termination resistance measured at VOL of the AGTL+ output driver. Measured at  
0.31*VCCP. RTT is connected to VCCP on die. Refer to processor I/O buffer models for I/V characteristics.  
Specified with on die RTT and RON are turned off.  
Cpad includes die capacitance only. No package parasitics are included.  
8.  
9.  
Table 10.  
Symbol  
CMOS Signal Group DC Specifications  
Parameter  
Min  
Typ  
Max  
Unit Notes1  
VCCP  
VIH  
VIL  
I/O Voltage  
0.997  
0.7*VCCP  
-0.1  
1.05  
1.102  
VCCP+0.1  
0.3*VCCP  
VCCP+0.1  
0.1*VCCP  
4.08  
V
Input High Voltage  
Input Low Voltage CMOS  
Output High Voltage  
Output Low Voltage  
Output High Current  
Output Low Current  
Input Leakage Current  
Pad Capacitance  
V
V
2
2, 3  
2
VOH  
VOL  
IOH  
IOL  
0.9*VCCP  
-0.1  
VCCP  
0
V
V
2
1.49  
mA  
mA  
µA  
pF  
5
1.49  
4.08  
4
ILI  
±100  
6
Cpad  
1.0  
2.3  
3.0  
NOTES:  
1.  
2.  
3.  
4.  
5.  
6.  
Unless otherwise noted, all specifications in this table apply to all processor frequencies.  
The VCCP referred to in these specifications refers to instantaneous VCCP  
Measured at 0.1*VCCP  
Measured at 0.9*VCCP  
For Vin between 0 V and VCCP. Measured when the driver is tristated.  
Cpad includes die capacitance only. No package parasitics are included.  
.
.
.
Datasheet  
27