Electrical Specifications
Table 9.
Symbol
AGTL+ Signal Group DC Specifications
Parameter
I/O Voltage
Min
Typ
Max
Unit Notes1
VCCP
GTLREF
VIH
0.997
2/3 VCCP - 2%
GTLREF + 0.1
-0.1
1.05
1.102
V
Reference Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Termination Resistance
Buffer On Resistance
Input Leakage Current
Pad Capacitance
2/3 VCCP
2/3 VCCP + 2%
VCCP + 0.1
V
V
V
6
3,6
2,4
6
VIL
GTLREF - 0.1
VOH
RTT
VCCP
55
47
63
Ω
Ω
7
RON
ILI
17.7
24.7
32.9
±100
2.75
5
µA
pF
8
Cpad
1.8
2.3
9
NOTES:
1.
2.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
IL is defined as the maximum voltage level at a receiving agent that will be interpreted as a logical low
value.
IH is defined as the minimum voltage level at a receiving agent that will be interpreted as a logical high
value.
IH and VOH may experience excursions above VCCP. However, input signal drivers must comply with the
V
3.
4.
5.
6.
7.
V
V
signal quality specifications in Chapter 3.
This is the pull-down driver resistance. Refer to processor I/O buffer models for I/V characteristics.
Measured at 0.31*VCCP. RON (min) = 0.38*RTT, RON (typ) = 0.45*RTT, RON (max) = 0.52*RTT.
GTLREF should be generated from VCCP with a 1% tolerance resistor divider. The VCCP referred to in these
specifications is the instantaneous VCCP
.
RTT is the on-die termination resistance measured at VOL of the AGTL+ output driver. Measured at
0.31*VCCP. RTT is connected to VCCP on die. Refer to processor I/O buffer models for I/V characteristics.
Specified with on die RTT and RON are turned off.
Cpad includes die capacitance only. No package parasitics are included.
8.
9.
Table 10.
Symbol
CMOS Signal Group DC Specifications
Parameter
Min
Typ
Max
Unit Notes1
VCCP
VIH
VIL
I/O Voltage
0.997
0.7*VCCP
-0.1
1.05
1.102
VCCP+0.1
0.3*VCCP
VCCP+0.1
0.1*VCCP
4.08
V
Input High Voltage
Input Low Voltage CMOS
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
Pad Capacitance
V
V
2
2, 3
2
VOH
VOL
IOH
IOL
0.9*VCCP
-0.1
VCCP
0
V
V
2
1.49
mA
mA
µA
pF
5
1.49
4.08
4
ILI
±100
6
Cpad
1.0
2.3
3.0
NOTES:
1.
2.
3.
4.
5.
6.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
The VCCP referred to in these specifications refers to instantaneous VCCP
Measured at 0.1*VCCP
Measured at 0.9*VCCP
For Vin between 0 V and VCCP. Measured when the driver is tristated.
Cpad includes die capacitance only. No package parasitics are included.
.
.
.
Datasheet
27