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370 参数 Datasheet PDF下载

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型号: 370
PDF下载: 下载PDF文件 查看货源
内容描述: 90纳米制程的赛扬M处理器 [Celeron M Processor on 90 nm Process]
分类和应用:
文件页数/大小: 68 页 / 864 K
品牌: INTEL [ INTEL ]
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Electrical Specifications  
Figure 6.  
Deep Sleep VCC and ICC Loadline for Celeron M Processors:  
Standard Voltage and Ultra Low Voltage  
VCC [V]  
Slope= -3.0 mV/A  
10mV= RIPPLE  
Vcc nom - 1.2%  
+/-1.5% from Nominal =VR Error  
I CC  
[A]  
ICC  
0
max  
Deep Sleep  
Table 8.  
Symbol  
FSB Differential BCLK Specifications  
Parameter  
Min  
Typ  
Max  
Unit  
Notes1  
VIH  
Input High Voltage  
Input Low Voltage  
Crossing Voltage  
0.660  
0.710  
0
0.850  
V
V
VIL  
VCROSS  
ΔVCROSS  
VTH  
0.25  
N/A  
0.35  
N/A  
0.55  
0.140  
V
2
6
3
4
5
Range of Crossing Points  
Threshold Region  
V
VCROSS - 0.100  
VCROSS + 0.100  
± 100  
V
ILI  
Input Leakage Current  
Pad Capacitance  
µA  
pF  
Cpad  
1.8  
2.3  
2.75  
NOTES:  
1.  
2.  
Unless otherwise noted, all specifications in this table apply to all processor frequencies.  
Crossing Voltage is defined as absolute voltage where rising edge of BCLK0 is equal to the falling edge of  
BCLK1.  
3.  
Threshold Region is defined as a region entered about the crossing voltage in which the differential receiver  
switches. It includes input threshold hysteresis.  
4.  
5.  
6.  
For Vin between 0 V and VIH.  
Cpad includes die capacitance only. No package parasitics are included.  
ΔVCROSS is defined as the total variation of all crossing voltages as defined in note 2.  
26  
Datasheet