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320 参数 Datasheet PDF下载

320图片预览
型号: 320
PDF下载: 下载PDF文件 查看货源
内容描述: 赛扬D处理器 [Celeron D Processor]
分类和应用:
文件页数/大小: 82 页 / 1743 K
品牌: INTEL [ INTEL ]
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Electrical Specifications  
Table 2-15. BSEL [1:0] and VID[5:0] DC Specifications  
1
Symbol  
(BSEL) Buffer On Resistance  
Parameter  
Max  
Unit  
Notes  
2
R
60  
60  
on  
2
3
R
(VID)  
Buffer On Resistance  
Max Pin Current  
on  
I
8
mA  
µA  
V
OL  
I
Output Leakage Current  
Voltage Tolerance  
200  
LO  
V
3.3 + 5%  
TOL  
NOTES:  
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.  
2. These parameters are not tested and are based on design simulations.  
3. Leakage to V with pin held at 2.5 V.  
SS  
Table 2-16. BOOTSELECT DC Specifications  
1
Symbol  
Parameter  
Min  
Typ  
Max  
Unit  
Notes  
V
Input Low Voltage  
Input High Voltage  
0.2 * VCCVID  
V
V
IL  
V
0.8 * VCCVID  
IH  
NOTES:  
1. These parameters are not tested and are based on design simulations.  
2.12  
VCC Overshoot Specification  
The Celeron D processor can tolerate short transient overshoot events where VCC exceeds the VID  
voltage when transitioning from a high to low current load condition. This overshoot cannot exceed  
VID + VOS_MAX (VOS_MAX is the maximum allowable overshoot voltage). The time duration of  
the overshoot event must not exceed TOS_MAX (TOS_MAX is the maximum allowable time duration  
above VID). These specifications apply to the processor die voltage as measured across the  
VCC_SENSE and VSS_SENSE pins.  
Table 2-17. VCC Overshoot Specifications  
Symbol  
Parameter  
Min  
Typ  
Max  
Unit  
Figure  
Notes  
Magnitude of V overshoot  
above VID  
CC  
V
0.050  
V
2-3  
OS_MAX  
Time duration of V  
overshoot above VID  
CC  
T
25  
µs  
2-3  
OS_MAX  
28  
Datasheet