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28F800F3 参数 Datasheet PDF下载

28F800F3图片预览
型号: 28F800F3
PDF下载: 下载PDF文件 查看货源
内容描述: FAST BOOT BLOCK闪存系列8位和16 MBIT [FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT]
分类和应用: 闪存
文件页数/大小: 47 页 / 274 K
品牌: INTEL [ INTEL ]
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FAST BOOT BLOCK DATASHEET  
another valid command is written. Page-mode and  
burst reads are not supported in this read mode.  
The status register content is updated and latched  
on the rising edge of ADV# or rising (falling) CLK  
edge when ADV# is low during synchronous burst-  
mode or the falling edge of OE# or CE#, whichever  
occurs first. The Read Status Register command  
functions independently of the VPP voltage.  
4.1  
Read Array Command  
Upon initial device power-up or exit from reset, the  
device defaults to read array mode. The read  
configuration register defaults to asynchronous  
page-mode. The Read Array command also causes  
the device to enter read array mode. The device  
remains enabled for reads until another command  
is written. Once the internal WSM has started a  
block erase or program, the device will not  
recognize the Read Array command until the WSM  
completes its operation or unless the WSM is  
suspended via an Erase or Program Suspend  
command. The Read Array command functions  
independently of the VPP voltage.  
4.4  
Clear Status Register  
Command  
Status register bits SR.5, SR.4, SR.3, and SR.1 are  
set to “1”s by the WSM and can only be cleared by  
issuing the Clear Status Register command. These  
bits indicate various error conditions. By allowing  
system software to reset these bits, several  
operations may be performed (such as cumulatively  
erasing or writing several bytes in sequence). The  
status register may be polled to determine if a  
problem occurred during the sequence. The Clear  
Status Register command functions independently  
of the applied VPP voltage. After executing this  
command, the device returns to read array mode.  
4.2  
Read Identifier Codes  
Command  
The identifier code operation is initiated by writing  
the Read Identifier Codes command. After writing  
the command, read cycles retrieve the  
manufacturer and device codes (see Table 4 for  
identifier code values). Page-mode and burst reads  
are not supported in this read mode. To terminate  
the operation, write another valid command, like the  
Read Array command. The Read Identifier Codes  
command functions independently of the VPP  
voltage.  
4.5  
Block Erase Command  
Erase is executed one block at a time and initiated  
by a two-cycle command. A block erase setup is  
written first, followed by a block erase confirm. This  
Table 4. Identifier Codes  
command  
sequence  
requires  
appropriate  
Address  
(Hex)  
Data  
sequencing and address within the block to be  
erased (erase changes all block data to FFH).  
Block preconditioning, erase, and verify are handled  
internally by the WSM. After the two-cycle block  
erase sequence is written, the device automatically  
outputs status register data when read (see  
Figure 7, Automated Block Erase Flowchart). The  
CPU can detect block erase completion by  
analyzing status register bit SR.7.  
Code  
(Hex)  
Manufacturer Code  
00000  
00001  
00001  
00001  
00001  
0089  
88F1  
88F2  
88F3  
88F4  
Device Code 8 Mbit  
-T  
-B  
16 Mbit -T  
-B  
When the block erase completes, check status  
register bit SR.5 for an error flag (“1”). If an error is  
detected, check status register bits SR.4, SR.3, and  
SR.1 to understand what caused the failure. After  
examining the status register, it should be cleared if  
4.3  
Read Status Register  
Command  
The status register can be read at any time by  
writing the Read Status Register command to the  
CUI. After writing this command, all subsequent  
read operations output status register data until  
an error was detected before issuing  
a new  
command. The device will remain in status register  
read mode until another command is written to the  
CUI.  
15  
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